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Group: LTM_LETI_etching - library [103 articles]

Nye artikler sendt inn av medlemmer i LTM_LETI_etching -gruppen
  • Inductively coupled Cl2/O2 plasma: experimental investigation and modelling
    Vacuum, Vol. 75, No. 11-12. (2004), pp. 237-246.
    by Efremov, Dong-Pyo Kim, Chang-Il Kim
    posted to cl2-o2 icp optical-emission-spectroscopy by these_morel to the group LTM_LETI_etching on 2008-01-30 13:06:03 as read
  • Thin gate oxide behavior during plasma patterning of silicon gates
    Applied Physics Letters, Vol. 75, No. 8. (1999), pp. 1069-1070.
    by L Vallier, L Desvoivres, M Bonvalot, O Joubert
    posted to etching oxidation recess silicon by these_morel to the group LTM_LETI_etching on 2008-01-03 13:49:54 as read
  • Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5. (2003), pp. 2205-2211.
    by SA Vitale, BA Smith
    posted to etching oxidation recess silicon by these_morel to the group LTM_LETI_etching on 2007-12-20 14:56:17 as read
  • Etching of tungsten with XeF[sub 2]: An x-ray photoelectron spectroscopy study
    Journal of Applied Physics, Vol. 62, No. 11. (1987), pp. 4587-4590.
    by A Bensaoula, E Grossman, A Ignatiev
    posted to xps tungsten fluorine by these_morel to the group LTM_LETI_etching on 2007-08-03 10:53:57 as read
  • New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes
    Plasma Sources Science and Technology, Vol. 14 (2005), pp. 599-609.
    by G Cunge, B Pelissier, O Joubert, R Ramos, C Maurice
    posted to xps parois by these_morel to the group LTM_LETI_etching on 2007-08-03 10:36:20 as read
  • X-ray photoelectron spectroscopy characteristics of the W/TiN/Si and W/TiN/SiO2/Si structures
    Journal of Electron Spectroscopy and Related Phenomena, Vol. 63, No. 2. (2 August 1993), pp. 145-153.
    by Sunil Kumar, DR Chopra, Gregory C Smith
    posted to xps tungsten titane_nitride by these_morel to the group LTM_LETI_etching on 2007-04-04 12:55:19 as read
  • Thermal decomposition mechanisms of tungsten nitride CVD precursors on Cu(1 1 1)
    Surface Science, Vol. 600, No. 3. (1 February 2006), pp. 743-754.
    by Yaw-Wen Yang, Jin-Bao Wu, Jelin Wang, Yi-Feng Lin, Hsin-Tien Chiu
    posted to xps tungsten-nitride chemical-vapor-deposition by these_morel to the group LTM_LETI_etching on 2007-03-30 15:56:19 as read
  • Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products
    Plasma Chemistry and Plasma Processing, Vol. 5, No. 4. (1 December 1985), pp. 333-351.
    by A Picard, G Turban
    posted to tungsten sf6-o2 molybdenum mass-spectrometry etching by these_morel to the group LTM_LETI_etching on 2007-03-30 15:41:30 as read
  • Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 2137-2148.
    by G Cunge, RL Inglebert, O Joubert, L Vallier, N Sadeghi
    posted to silicon mass-spectrometry hbr-cl2-o2 etching by these_morel to the group LTM_LETI_etching on 2007-03-21 16:14:22 as read
  • Etching characteristics of TiN used as hard mask in dielectric etch process
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 24, No. 5. (2006), pp. 2262-2270.
    by M Darnon, T Chevolleau, D Eon, L Vallier, J Torres, O Joubert
    posted to titane_nitride xps by these_morel to the group LTM_LETI_etching on 2007-02-28 07:59:19 as read
  • Etching of High-k Dielectric HfO2 Films in BCl3-Containing Plasmas Enhanced with O2 Addition
    Japanese Journal of Applied Physics, Vol. 45, No. 10. (2006), pp. L297-L300.
    by Tomohiro Kitagawa, Keisuke Nakamura, Kazushi Osari, Kazuo Takahashi, Kouichi Ono
    posted to bcl3-o2 etching hfo2 by these_morel to the group LTM_LETI_etching on 2006-12-14 14:30:07 as read
  • Dry Etching Characteristics of Pb (Zr,Ti)O3 Films in CF4 and Cl2/CF4 Inductively Coupled Plasmas
    Japanese Journal of Applied Physics, Vol. 40, No. 3A. (2001), pp. 1408-1419.
    by Jin-Ki Jung, Won-Jong Lee
    posted to actinometry cf4-cl2 by these_morel to the group LTM_LETI_etching on 2006-12-14 14:25:52 as read
  • TiN Etching and Its Effects on Tungsten Etching in SF6/Ar Helicon Plasma
    Japanese Journal of Applied Physics, Vol. 37, No. 3A. (1998), pp. 801-806.
    by Chang J Choi, Yeo S Seol, Ki-Ho Baik
    posted to etching sf6-ar titane_nitride tungsten by these_morel to the group LTM_LETI_etching on 2006-12-14 14:19:37 as read
  • Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors
    Japanese Journal of Applied Physics, Vol. 45, No. 10B. (2006), pp. 8364-8369.
    by Xu Li, Haiping Zhou, Chris DW Wilkinson, Iain G Thayne
    posted to optical-emission-spectroscopy tungsten by these_morel to the group LTM_LETI_etching on 2006-12-14 14:15:27 as *****
  • Anisotropic dry etching of submicron W features using a Ti mask
    Semiconductor Science and Technology, Vol. 7, No. 12. (1992), pp. 1489-1494.
    by TR Fullowan, SJ Pearton, F Ren, GE Mahoney, RL Kostelak
    posted to cf4 etching sf6 tungsten by these_morel to the group LTM_LETI_etching on 2006-12-14 14:09:51 as read
  • Novel dual-metal gate technology using Mo-MoSi/sub x/ combination
    Electron Devices, IEEE Transactions on, Vol. 53, No. 6. (2006), pp. 1420-1426.
    by Tzung-Lin Li, Wu-Lin Ho, Hung-Bin Chen, HCH Wang, Chun-Yen Chang, Chenming Hu
    posted to dual-metal-gate mo mosi by these_morel to the group LTM_LETI_etching on 2006-12-14 14:07:24 as read
  • Estimating and controlling atomic chlorine concentration via actinometry
    Semiconductor Manufacturing, IEEE Transactions on, Vol. 12, No. 3. (1999), pp. 323-331.
    by CK Hanish, JW Grizzle, FL Teny
    posted to actinometry cl2 by these_morel to the group LTM_LETI_etching on 2006-12-14 14:05:16 as read
  • Fluorine incorporation into HfSiON dielectric for V/sub th/ control and its impact on reliability for poly-Si gate pFET
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International (2005), pp. 413-416.
    by M Inoue, S Tsujikawa, M Mizutani, K Nomura, T Hayashi, K Shiga, J Yugami, J Tsuchimoto, Y Ohno, M Yoneda
    posted to fluorine hfsion incorporation by these_morel to the group LTM_LETI_etching on 2006-12-14 14:03:21 as read
  • Improvement in high-k (HfO/sub 2//SiO/sub 2/) reliability by incorporation of fluorine
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International (2005), 4 pp..
    by K Seo, R Sreenivasan, PC Mclntyre, KC Saraswat
    posted to fluorine hfo2 incorporation by these_morel to the group LTM_LETI_etching on 2006-12-14 14:01:11 as read
  • Nitrogen dissociation in a low pressure cylindrical ICP discharge studied by actinometry and mass spectrometry
    Journal of Physics D: Applied Physics, Vol. 38, No. 24. (2005), pp. 4278-4289.
    by T Czerwiec, F Greer, DB Graves
    posted to actinometry dissociation mass-spectrometry nitrogen by these_morel to the group LTM_LETI_etching on 2006-12-14 13:52:37 as read
  • Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density
    Journal of Applied Physics, Vol. 51, No. 6. (1980), pp. 3134-3136.
    by JW Coburn, M Chen
    posted to actinometry optical-emission-spectroscopy plasmas by these_morel to the group LTM_LETI_etching on 2006-12-14 13:48:38 as read
  • Composition, residual stress, and structural properties of thin tungsten nitride films deposited by reactive magnetron sputtering
    Journal of Applied Physics, Vol. 88, No. 3. (2000), pp. 1380-1388.
    by YG Shen, YW Mai, DR Mckenzie, QC Zhang, WD Mcfall, WE Mcbride
    posted to deposition tungsten-nitride by these_morel to the group LTM_LETI_etching on 2006-12-14 13:45:52 as read
  • Prevention method of a notching caused by surface charging in silicon reactive ion etching
    Journal of Micromechanics and Microengineering, Vol. 15, No. 2. (2005), pp. 358-361.
    by Che H Kim, Yong K Kim
    posted to effet-de-charge notching by these_morel to the group LTM_LETI_etching on 2006-12-14 13:43:00 as read
  • The effect of nitrogen ion implantation on tungsten surfaces
    Applied Surface Science, Vol. 150, No. 1-4. (11 August 1999), pp. 34-38.
    by HL Zhang, DZ Wang, NK Huang
    posted to tungsten-nitride xps by these_morel to the group LTM_LETI_etching on 2006-12-13 15:58:04 as read
  • Tungsten nitride films grown via pulsed laser deposition studied in situ by electron spectroscopies
    Applied Surface Science, Vol. 214, No. 1-4. (31 May 2003), pp. 58-67.
    by G Soto, de La, FF Castillon, JA Diaz, R Machorro, MH Farias
    posted to tungsten-nitride xps by these_morel to the group LTM_LETI_etching on 2006-12-13 15:55:32 as read
  • XPS, XES and XAS studies of the electronic structure of tungsten oxides
    Journal of Alloys and Compounds, Vol. 305, No. 1-2. (6 June 2000), pp. 1-6.
    by Khyzhun
    posted to tungsten-oxide xps by these_morel to the group LTM_LETI_etching on 2006-12-13 15:52:09 as read
  • Behaviors of electron and negative-ion densities in low-pressure high-density inductively coupled plasmas of SF6, NF3, CF4, and C4F8 gases diluted with Ar
    Thin Solid Films, Vol. 407, No. 1-2. (22 March 2002), pp. 198-203.
    by Akihiro Kono, Masahito Konishi, Kenji Kato
    posted to c4f8 cf4 negative-ion nf3 plasmas sf6 by these_morel to the group LTM_LETI_etching on 2006-12-13 15:49:29 as read
  • Dry etching of titanium nitride thin films in CF[sub 4]--O[sub 2] plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 13, No. 2. (1995), pp. 335-342.
    by F Fracassi, R D'agostino, R Lamendola, I Mangieri
    posted to cf4-o2 etching titane_nitride xps by these_morel to the group LTM_LETI_etching on 2006-12-13 15:42:58 as read
  • Etching characteristics of high-k dielectric HfO[sub 2] thin films in inductively coupled fluorocarbon plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, No. 6. (2005), pp. 1691-1697.
    by Kazuo Takahashi, Kouichi Ono, Yuichi Setsuhara
    posted to etching fluocarbon hfo2 plasma xps by these_morel to the group LTM_LETI_etching on 2006-12-13 15:40:29 as read
  • Selective etching of high-k HfO[sub 2] films over Si in hydrogen-added fluorocarbon (CF[sub 4]/Ar/H[sub 2] and C[sub 4]F[sub 8]/Ar/H[sub 2]) plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 3. (2006), pp. 437-443.
    by Kazuo Takahashi, Kouichi Ono
    posted to etching fluocarbon hfo2 plasmas xps by these_morel to the group LTM_LETI_etching on 2006-12-13 15:38:19 as read
  • Reactive sputter deposition of tungsten nitride thin films
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, No. 5. (2002), pp. 1699-1703.
    by Colin C Baker, Ismat S Shah
    posted to resistivity sputter-deposition tungsten-nitride xps by these_morel to the group LTM_LETI_etching on 2006-12-13 15:35:21 as read
  • Notching as an example of charging in uniform high density plasmas
    The 3rd International Workshop on Advanced Plasma Tools for Etching, Chemical Vapor Deposition, and Plasma Vapor Deposition: Sources, Process Control, and Diagnostics, Vol. 14, No. 1. (1996), pp. 560-565.
    by Takashi Kinoshita, Masami Hane, James P Mcvittie
    posted to effet-de-charge notching by these_morel to the group LTM_LETI_etching on 2006-12-13 15:30:40 as read
  • Reactive Ion Etching of Tungsten in SF[sub 6]-N[sub 2] Plasma
    Journal of Electrochemical Society, Vol. 137, No. 1. (January 1990), pp. 225-229.
    by Nobuki Mutsukura, Guy Turban
    posted to sf6-n2 tungsten xps by these_morel to the group LTM_LETI_etching on 2006-12-13 15:27:43 as ***
  • Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma.
    Japanese Journal of Applied Physics, Vol. 44, No. 7B. (2005), pp. 5811-5818.
    by Myoung H Shin, Sung W Na, Nae E Lee, Tae K Oh, Jiyoung Kim, Taeho Lee, Jinho Ahn
    posted to hfo2 sf6-ar-cl2 tan xps by these_morel to the group LTM_LETI_etching on 2006-08-04 08:47:29 as read
  • 30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors
    Microelectronic Engineering, Vol. 83, No. 4-9. ( 2006), pp. 1152-1154.
    by X Li, X Cao, H Zhou, CDW Wilkinson, S Thoms, D Macintyre, M Holland, IG Thayne
    posted to c4f8 etching icp sf6 tungsten by these_morel to the group LTM_LETI_etching on 2006-07-26 12:51:56 as read along with 1 person Stanley_vrc
  • CF/sub 4/ decomposition using inductively coupled plasma: effect of power frequency
    Industry Applications, IEEE Transactions on, Vol. 41, No. 1. (2005), pp. 215-220.
    by T Kuroki, J Mine, M Okubo, T Yamamoto, N Saeki
    posted to cf4-o2 decomposition icp by these_morel to the group LTM_LETI_etching on 2006-06-19 10:21:45 as read
  • Kinetic processes of NF[sub 3] etchant gas discharges
    Journal of Applied Physics, Vol. 57, No. 5. (1985), pp. 1596-1601.
    by KE Greenberg, JT Verdeyen
    posted to decomposition nf3 by these_morel to the group LTM_LETI_etching on 2006-06-19 10:16:27 as read
  • Effects of experimental parameters on NF3 decomposition fraction in an oxygen-based RF plasma environment
    Chemosphere, Vol. 57, No. 9. (December 2004), pp. 1157-1163.
    by Ya-Fen Wang, Lin-Chi Wang, Minliang Shih, Cheng-Hsien Tsai
    posted to decomposition nf3 nf3-o2 by these_morel to the group LTM_LETI_etching on 2006-06-19 10:10:08 as read
  • Ultra thin tungsten nitride film growth on dielectric surfaces
    Thin Solid Films, Vol. 458, No. 1-2. (30 June 2004), pp. 251-256.
    by Sun, ER Engbrecht, T Bolom, C Cilino, JH Sim, JM White, JG Ekerdt, K Pfeifer
    posted to chemical-vapor-deposition tungsten-nitride wco6 xps by these_morel to the group LTM_LETI_etching on 2006-06-19 10:07:54 as read
  • The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers
    Thin Solid Films, Vol. 320, No. 1. (4 May 1998), pp. 147-150.
    by HC Lee, S Vanhaelemeersch
    posted to cl2 etching masking-materials sf6-ar tungsten by these_morel to the group LTM_LETI_etching on 2006-06-19 09:39:31 as read along with 1 person Stanley_vrc
  • A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates
    Microelectronic Engineering, Vol. 83, No. 4-9. ( 2006), pp. 1159-1162.
    by X Li, X Cao, H Zhou, CDW Wilkinson, S Thoms, D Macintyre, M Holland, IG Thayne
    posted to etching rie sf6-chf3 sf6-n2 sf6-o2 tungsten by these_morel to the group LTM_LETI_etching on 2006-06-19 09:36:54 as read along with 1 person Stanley_vrc
  • Tungsten etching mechanisms in CF[sub 4]/O[sub 2] reactive ion etching plasmas
    Journal of Applied Physics, Vol. 66, No. 10. (1989), pp. 5034-5038.
    by Tim D Bestwick, Gottlieb S Oehrlein
    posted to cf4-o2 rie tungsten xps by these_morel to the group LTM_LETI_etching on 2006-05-12 09:49:54 as read along with 1 person Stanley_vrc
  • Etching of SiO[sub 2] and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition
    Journal of Applied Physics, Vol. 88, No. 10. (2000), pp. 5570-5584.
    by Evangelos Gogolides, Philippe Vauvert, George Kokkoris, Guy Turban, Andreas G Boudouvis
    posted to fluocarbon sio2 by these_morel to the group LTM_LETI_etching on 2006-05-10 08:20:28 as read
  • Challenges in metal gate etching for logic applications
    (2003)
    by Shashank Deshmukh, Jinhan Choi, Meihua Shen, Yan Du, Kyeong T Lee, Sang I Yi, Jae B Yu, Thorsten Lill
    posted to cl2-o2 hbr sio2 titane_nitride by these_morel to the group LTM_LETI_etching on 2006-05-10 08:13:25 as read along with 1 person Stanley_vrc
  • Fluorocarbon polymer formation, characterization, and reduction in polycrystalline--silicon etching with [bold CF][sub 4]-added plasma
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, No. 3. (2001), pp. 871-877.
    by Songlin Xu, Zhiwen Sun, Arthur Chen, Xueyu Qian, Dragan Podlesnik
    posted to cf4 hbr o2 polymer_layer by these_morel to the group LTM_LETI_etching on 2006-04-05 11:41:58 as read
  • Formation of polymeric layers using halogen-carbon plasmas
    Vacuum, Vol. 68, No. 3. (20 November 2002), pp. 239-244.
    by Z Rutkuniene, A Grigonis
    posted to cf4 polymer_layer rie by these_morel to the group LTM_LETI_etching on 2006-04-05 11:37:28 as read
  • Patterning of W/WNx/poly-Si gate electrode using Cl2/O2 plasmas
    Microelectronic Engineering, Vol. 65, No. 3. (March 2003), pp. 285-292.
    by Hyoun-Woo Kim, Byong-Sun Jub, Chang-Jin Kangb, Joo-Tae Moon
    posted to cl2-o2 poly-si temperature tungsten-nitride by these_morel to the group LTM_LETI_etching on 2006-03-21 14:36:30 as read along with 2 people ashrafrkhan Stanley_vrc
  • Etching processes of tungsten in SF[sub 6]-O[sub 2] radio-frequency plasmas
    Journal of Applied Physics, Vol. 70, No. 6. (1991), pp. 3314-3323.
    by MC Peignon, Ch, G Turban
    posted to sf6-o2 tungsten by these_morel to the group LTM_LETI_etching on 2006-03-21 14:28:01 as read along with 1 person Stanley_vrc
  • Effect of additive gases on the selective etching of tungsten films using inductively coupled halogen-based plasmas
    Thin Solid Films, Vol. 447-448 (30 January 2004), pp. 586-591.
    by SD Park, YJ Lee, NG Cho, SG Kim, HH Choe, MP Hong, GY Yeom
    posted to ar cf4-cl2 icp n2 o2 tungsten by these_morel to the group LTM_LETI_etching on 2006-03-21 14:23:28 as read along with 2 people ashrafrkhan Stanley_vrc
  • Etching of High-k Dielectric HfO2 Films in BCl3-Containing Plasmas Enhanced with O2 Addition
    Japanese Journal of Applied Physics, Vol. 45, No. 10. (2006), pp. L297-L300.
    by Tomohiro Kitagawa, Keisuke Nakamura, Kazushi Osari, Kazuo Takahashi, Kouichi Ono, Masanori Oosawa, Satoshi Hasaka, Minoru Inoue
    posted to bcl3-o2 ecr hfo2 high-k by these_morel to the group LTM_LETI_etching on 2006-03-21 14:13:03 as read along with 2 people Stanley_vrc gramcd
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