Wed, 09 Jul 2008 13:31:20 BST CiteULike: dcastros Dutton http://www.citeulike.org/user/dcastro/author/Dutton CiteULike.org en-gb Copyright © 2004-2008 citeulike.org http://www.citeulike.org/user/dcastro/article/2776272 <i>Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International (1997), pp. 301-304.</i><br /><br />The rapid growth of wireless systems at radio frequencies (RF) is driving the need for improved analog circuit and device analysis at gigaHertz frequencies. This includes: low noise front ends, linear amplifiers, mixers, and power amplifiers. Moreover, the parasitic effects of capacitance and inductance, both on- and off-chip, require careful extraction and characterization in support of predictive modeling. While time-domain techniques work well for digital systems, often the spectral and dynamic range requirements for communications systems necessitate accurate analysis of harmonic content with frequency differences of a thousandfold or more. This paper demonstrates the applicability and unique strengths of device-level harmonic balance (HB) in the simulation and physical modeling of RF circuits Device simulation for RF applications RW Dutton B Troyanovsky Z Yu T Arnborg F Rotella G Ma J Sato-Iwanaga doi:10.1109/IEDM.1997.650386 Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International (1997), pp. 301-304. 2008-05-09T16:40:13-00:00 1997 Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International 301 304 rf simulation http://www.citeulike.org/user/dcastro/article/2776271 <i>Microwave Theory and Techniques, IEEE Transactions on, Vol. 48, No. 6. (2000), pp. 991-999.</i><br /><br />This paper describes how device simulation may be used for the modeling, analysis, and design of radio-frequency (RF) laterally diffused metal-oxide-semiconductor (LDMOS) transistors. Improvements to device analysis needed to meet the requirements of RF devices are discussed. Key modeling regions of the LDMOS device are explored and important physical effects are characterized. The LDMOS model is compared to dc and small-signal ac measurements for calibration purposes. Using the calibrated model, large-signal accuracy is verified using harmonic distortion simulation, and intermodulation analysis. Predictive analysis and a study of the structure's parasitic components are also presented. Load-pull simulation is used to analyze matching network effects to determine the best choices for device impedance matching Modeling, analysis, and design of RF LDMOS devices using harmonic-balance device simulation FM Rotella G Ma Z Yu RW Dutton doi:10.1109/22.904736 Microwave Theory and Techniques, IEEE Transactions on, Vol. 48, No. 6. (2000), pp. 991-999. 2008-05-09T16:40:12-00:00 2000 Microwave Theory and Techniques, IEEE Transactions on 48 6 991 999 analysis design model rf simulation