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<pubDate>Thu, 21 Aug 2008 11:09:24 BST</pubDate>


	<title>CiteULike: thmsdmstrs Marques</title>
	<description>CiteULike: thmsdmstrs Marques</description>


	<link>http://www.citeulike.org/user/thmsdmstr/author/Marques</link>
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        <rdf:li rdf:resource="http://www.citeulike.org/user/thmsdmstr/article/1439937"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/thmsdmstr/article/1424583"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/thmsdmstr/article/1412948"/>

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<item rdf:about="http://www.citeulike.org/user/thmsdmstr/article/1439937">
    <title>Improved quasi-static spectral domain analysis of microstrip lines on high-conductivity insulator-semiconductor substrates</title>
    <link>http://www.citeulike.org/user/thmsdmstr/article/1439937</link>
    <description>&lt;i&gt;Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters], Vol. 9, No. 2. (1999), pp. 57-59.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;An improved quasi-static integral spectral domain analysis (SDA) for multistrips on a layered insulator-semiconductor substrate is proposed. This method of analysis significantly improves previous quasi-static SDA, accounting for the series resistance of the line in addition to the shunt conductance considered in the conventional quasi-TEM SDA. An excellent agreement with the full-wave analysis results is obtained with considerably less computation time</description>
    <dc:title>Improved quasi-static spectral domain analysis of microstrip lines on high-conductivity insulator-semiconductor substrates</dc:title>

    <dc:creator>J Aguilera</dc:creator>
    <dc:creator>R Marques</dc:creator>
    <dc:creator>M Horno</dc:creator>
    <dc:source>Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters], Vol. 9, No. 2. (1999), pp. 57-59.</dc:source>
    <dc:date>2007-07-06T19:41:47-00:00</dc:date>
    <prism:publicationYear>1999</prism:publicationYear>
    <prism:publicationName>Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters]</prism:publicationName>
    <prism:volume>9</prism:volume>
    <prism:number>2</prism:number>
    <prism:startingPage>57</prism:startingPage>
    <prism:endingPage>59</prism:endingPage>
    <prism:category>microstrip</prism:category>
    <prism:category>p_tmlm</prism:category>
    <prism:category>qtm</prism:category>
    <prism:category>sda</prism:category>
    <prism:category>semiconductor</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/thmsdmstr/article/1424583">
    <title>Quasi-TEM surface impedance approaches for the analysis of MIC and MMIC transmission lines, including both conductor and substrate losses</title>
    <link>http://www.citeulike.org/user/thmsdmstr/article/1424583</link>
    <description>&lt;i&gt;IEEE Trans. Microw. Theory Tech., Vol. 43, No. 7. (1995), pp. 1553-1558.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;The surface impedance approach is applied to the quasi-TEM spectral domain analysis of MIC and MMIC lines with lossy metallizations in both the weak skin effect and the strong skin effect regimes. The use of the spectral domain technique makes possible the analysis of lines with multilayer iso/anisotropic substrates, including semiconductor and/or magnetic layers. PC computer codes have been developed following the proposed technique. Computation times within a few seconds are achieved</description>
    <dc:title>Quasi-TEM surface impedance approaches for the analysis of MIC and MMIC transmission lines, including both conductor and substrate losses</dc:title>

    <dc:creator>J Aguilera</dc:creator>
    <dc:creator>R Marques</dc:creator>
    <dc:creator>M Horno</dc:creator>
    <dc:source>IEEE Trans. Microw. Theory Tech., Vol. 43, No. 7. (1995), pp. 1553-1558.</dc:source>
    <dc:date>2007-06-30T08:35:59-00:00</dc:date>
    <prism:publicationYear>1995</prism:publicationYear>
    <prism:publicationName>IEEE Trans. Microw. Theory Tech.</prism:publicationName>
    <prism:volume>43</prism:volume>
    <prism:number>7</prism:number>
    <prism:startingPage>1553</prism:startingPage>
    <prism:endingPage>1558</prism:endingPage>
    <prism:category>losses</prism:category>
    <prism:category>skineffect</prism:category>
    <prism:category>surface_impedance</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/thmsdmstr/article/1412948">
    <title>Quasi-TM MoL/MoM approach for computing the transmission-line parameters of lossy lines</title>
    <link>http://www.citeulike.org/user/thmsdmstr/article/1412948</link>
    <description>&lt;i&gt;IEEE Trans. Microw. Theory Tech., Vol. 54, No. 1. (2006), pp. 198-209.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;This paper presents a quasi-TM approach for the fundamental mode of transmission lines with semiconductor substrates and nonperfect metallic conductors. The approach has allowed us to develop a transmission-line model by properly defining frequency-dependent parameters in terms of the quasi-static electric potential and the electric current density along the propagation direction in the line. The previous quasi-TM analysis avoids the involved numerical root finding process typical in full-wave analysis, and overcomes the limitations of the conventional quasi-TEM approach to account for the effects of the longitudinal currents present both in the lossy substrates and in the nonperfect conductors. The transmission-line parameters have been computed by a hybrid technique that combines the method of lines with the method of the moments (MoM). The total CPU effort has been considerably reduced thanks to the possibility of finding closed-form expressions for the reaction integrals appearing in the MoM. Comparisons with previous computed and measured results show the validity of the present model.</description>
    <dc:title>Quasi-TM MoL/MoM approach for computing the transmission-line parameters of lossy lines</dc:title>

    <dc:creator>G Plaza</dc:creator>
    <dc:creator>R Marques</dc:creator>
    <dc:creator>F Medina</dc:creator>
    <dc:source>IEEE Trans. Microw. Theory Tech., Vol. 54, No. 1. (2006), pp. 198-209.</dc:source>
    <dc:date>2007-06-26T06:09:39-00:00</dc:date>
    <prism:publicationYear>2006</prism:publicationYear>
    <prism:publicationName>IEEE Trans. Microw. Theory Tech.</prism:publicationName>
    <prism:volume>54</prism:volume>
    <prism:number>1</prism:number>
    <prism:startingPage>198</prism:startingPage>
    <prism:endingPage>209</prism:endingPage>
    <prism:category>interconnects</prism:category>
    <prism:category>p_tmlm</prism:category>
    <prism:category>quasi-tm</prism:category>
    <prism:category>semiconductor</prism:category>
    <prism:category>skineffect</prism:category>
    <prism:category>transmission</prism:category>
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