Challenges in RF analog integrated circuits

@inproceedings{citeulike:2060699, abstract = {The recent aggressive downsizing of CMOS devices makes it potential to implement RF front-end in the CMOS process, but RF circuits have some special demands which the standard digital CMOS process does not consider: low noise, high linearity, high quality passive components. These demands present the main barriers to implement the RF front-end in CMOS process and need special efforts to get good performance. This paper discusses some relevant issues to the implementations of RF front-end in CMOS process}, author = {Bingxue, Shi }, booktitle = {ASIC, 2001. Proceedings. 4th International Conference on}, citeulike-article-id = {2060699}, journal = {ASIC, 2001. Proceedings. 4th International Conference on}, keywords = {capacitor, circuits, component, inductor}, pages = {800--805}, posted-at = {2007-12-05 12:10:46}, priority = {2}, title = {Challenges in RF analog integrated circuits}, url = {http://ieeexplore.ieee.org/xpls/abs\_all.jsp?arnumber=982684}, year = {2001} }

TY - CONF ID - citeulike:2060699 L3 - citeulike-article-id:2060699 TI - Challenges in RF analog integrated circuits T2 - ASIC, 2001. Proceedings. 4th International Conference on JF - ASIC, 2001. Proceedings. 4th International Conference on SP - 800 EP - 805 N2 - The recent aggressive downsizing of CMOS devices makes it potential to implement RF front-end in the CMOS process, but RF circuits have some special demands which the standard digital CMOS process does not consider: low noise, high linearity, high quality passive components. These demands present the main barriers to implement the RF front-end in CMOS process and need special efforts to get good performance. This paper discusses some relevant issues to the implementations of RF front-end in CMOS process KW - capacitor KW - circuits KW - component KW - inductor AU - Bingxue, Shi PY - 2001/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=982684 ER -