High-efficiency power amplifier integrated with antenna

by: V Radisic, Siou T Chew, Yongxi Qian, T Itoh

Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters], Vol. 7, No. 2. (1997), pp. 39-41.

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Abstract

Two class B GaAs field-effect transistor (FET) power amplifiers integrated with patch antennas have been designed and fabricated at 2.48 GHz. Both amplifiers are integrated with patch antennas, which serve as load and radiator. In one case, a standard patch design was used with random harmonic termination. In another case, a modified patch design was used, which allows the tuning of the second harmonic. In this case the antenna has an additional function of a filter. An increase of 7% in the power-added efficiency (PAE) and 0.5 dB in the output power was achieved through the second harmonic tuning

@article{citeulike:2762149, abstract = {Two class B GaAs field-effect transistor (FET) power amplifiers integrated with patch antennas have been designed and fabricated at 2.48 GHz. Both amplifiers are integrated with patch antennas, which serve as load and radiator. In one case, a standard patch design was used with random harmonic termination. In another case, a modified patch design was used, which allows the tuning of the second harmonic. In this case the antenna has an additional function of a filter. An increase of 7\% in the power-added efficiency (PAE) and 0.5 dB in the output power was achieved through the second harmonic tuning}, author = {Radisic, V. and Chew, Siou T. and Qian, Yongxi and Itoh, T. }, booktitle = {Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters]}, citeulike-article-id = {2762149}, doi = {10.1109/75.553052}, journal = {Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters]}, keywords = {active, amplifier, antenna, integrated}, number = {2}, pages = {39--41}, posted-at = {2008-05-06 18:44:35}, priority = {2}, title = {High-efficiency power amplifier integrated with antenna}, url = {http://dx.doi.org/10.1109/75.553052}, volume = {7}, year = {1997} }

RIS record

TY - JOUR ID - citeulike:2762149 L3 - citeulike-article-id:2762149 TI - High-efficiency power amplifier integrated with antenna T2 - Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters] JF - Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters] VL - 7 IS - 2 SP - 39 EP - 41 N2 - Two class B GaAs field-effect transistor (FET) power amplifiers integrated with patch antennas have been designed and fabricated at 2.48 GHz. Both amplifiers are integrated with patch antennas, which serve as load and radiator. In one case, a standard patch design was used with random harmonic termination. In another case, a modified patch design was used, which allows the tuning of the second harmonic. In this case the antenna has an additional function of a filter. An increase of 7% in the power-added efficiency (PAE) and 0.5 dB in the output power was achieved through the second harmonic tuning KW - active KW - amplifier KW - antenna KW - integrated AU - Radisic, V AU - Chew, Siou AU - Qian, Yongxi AU - Itoh, T PY - 1997/// UR - http://dx.doi.org/10.1109/75.553052 ER -

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