Output harmonic termination techniques for AlGaN/GaN HEMT power amplifiers using active integrated antenna approach

@inproceedings{citeulike:2762158, abstract = {In this paper, effects of output harmonic terminations on PAE and output power of AlGaN/GaN HEMT power amplifier are investigated. Using a traditional method of harmonic termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high efficiency AlGaN/GaN HEMT power amplifier with harmonic termination characteristics by using the active integrated antenna approach. For the microstrip-based AlGaN/GaN HEMT power amplifier, large signal measurements and comparisons of PAE and output power were done in class-AB operation with and without output harmonic terminations. For the antenna integrated power amplifier using an AlGaN/GaN HEMT with 1 mm gate periphery, output power of 30 dBm and peak PAE of 55 \% with a power gain of 14 dB were achieved at a drain voltage of 18 V and a gate voltage of -2.8 V}, author = {Chung, Younkyu and Hang, C. Y. and Cai, Shujun and Qian, Yongxi and Wen, C. P. and Wang, K. L. and Toh, T. }, booktitle = {Microwave Symposium Digest, 2002 IEEE MTT-S International}, citeulike-article-id = {2762158}, doi = {10.1109/MWSYM.2002.1011648}, journal = {Microwave Symposium Digest, 2002 IEEE MTT-S International}, keywords = {active, amplifier, antenna, integrated, power}, pages = {433--436}, posted-at = {2008-05-06 18:46:25}, priority = {2}, title = {Output harmonic termination techniques for AlGaN/GaN HEMT power amplifiers using active integrated antenna approach}, url = {http://dx.doi.org/10.1109/MWSYM.2002.1011648}, volume = {1}, year = {2002} }

TY - CONF ID - citeulike:2762158 L3 - citeulike-article-id:2762158 TI - Output harmonic termination techniques for AlGaN/GaN HEMT power amplifiers using active integrated antenna approach T2 - Microwave Symposium Digest, 2002 IEEE MTT-S International JF - Microwave Symposium Digest, 2002 IEEE MTT-S International VL - 1 SP - 433 EP - 436 N2 - In this paper, effects of output harmonic terminations on PAE and output power of AlGaN/GaN HEMT power amplifier are investigated. Using a traditional method of harmonic termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high efficiency AlGaN/GaN HEMT power amplifier with harmonic termination characteristics by using the active integrated antenna approach. For the microstrip-based AlGaN/GaN HEMT power amplifier, large signal measurements and comparisons of PAE and output power were done in class-AB operation with and without output harmonic terminations. For the antenna integrated power amplifier using an AlGaN/GaN HEMT with 1 mm gate periphery, output power of 30 dBm and peak PAE of 55 % with a power gain of 14 dB were achieved at a drain voltage of 18 V and a gate voltage of -2.8 V KW - active KW - amplifier KW - antenna KW - integrated KW - power AU - Chung, Younkyu AU - Hang, CY AU - Cai, Shujun AU - Qian, Yongxi AU - Wen, CP AU - Wang, KL AU - Toh, T PY - 2002/// UR - http://dx.doi.org/10.1109/MWSYM.2002.1011648 ER -