Schottky diodes for analogue phase shifters in GaAs MMICs

by: PR Shepherd, MJ Cryan

Microwave Theory and Techniques, IEEE Transactions on, Vol. 44, No. 11. (1996), pp. 2112-2116.

View FullText article

DOI, IEEE Explore

Reviews [Write a review of this article]

There are no reviews of this article

Find related articles from these CiteULike users

dcastro

Find related articles with these CiteULike tags

phase

Abstract

A simple Schottky diode structure, which is easily implemented in a foundry gallium arsenide (GaAs) process, is described. This structure occupies very much less area than the usual technique of realising Schottky diodes, using standard FET structures. Two variations of the diode have been characterized and modeled using a standard equivalent circuit. This has been used to design a simple analogue phase shifter based on a loaded-line configuration. The phase shifter was manufactured using a standard foundry process and has shown excellent results in terms of phase shift linearity with tuning voltage, combined with low insertion loss, over the range 2-8 GHz

@article{citeulike:2762211, abstract = {A simple Schottky diode structure, which is easily implemented in a foundry gallium arsenide (GaAs) process, is described. This structure occupies very much less area than the usual technique of realising Schottky diodes, using standard FET structures. Two variations of the diode have been characterized and modeled using a standard equivalent circuit. This has been used to design a simple analogue phase shifter based on a loaded-line configuration. The phase shifter was manufactured using a standard foundry process and has shown excellent results in terms of phase shift linearity with tuning voltage, combined with low insertion loss, over the range 2-8 GHz}, author = {Shepherd, P. R. and Cryan, M. J. }, booktitle = {Microwave Theory and Techniques, IEEE Transactions on}, citeulike-article-id = {2762211}, doi = {10.1109/22.543970}, journal = {Microwave Theory and Techniques, IEEE Transactions on}, keywords = {phase}, number = {11}, pages = {2112--2116}, posted-at = {2008-05-06 19:28:59}, priority = {2}, title = {Schottky diodes for analogue phase shifters in GaAs MMICs}, url = {http://dx.doi.org/10.1109/22.543970}, volume = {44}, year = {1996} }

RIS record

TY - JOUR ID - citeulike:2762211 L3 - citeulike-article-id:2762211 TI - Schottky diodes for analogue phase shifters in GaAs MMICs T2 - Microwave Theory and Techniques, IEEE Transactions on JF - Microwave Theory and Techniques, IEEE Transactions on VL - 44 IS - 11 SP - 2112 EP - 2116 N2 - A simple Schottky diode structure, which is easily implemented in a foundry gallium arsenide (GaAs) process, is described. This structure occupies very much less area than the usual technique of realising Schottky diodes, using standard FET structures. Two variations of the diode have been characterized and modeled using a standard equivalent circuit. This has been used to design a simple analogue phase shifter based on a loaded-line configuration. The phase shifter was manufactured using a standard foundry process and has shown excellent results in terms of phase shift linearity with tuning voltage, combined with low insertion loss, over the range 2-8 GHz KW - phase AU - Shepherd, PR AU - Cryan, MJ PY - 1996/// UR - http://dx.doi.org/10.1109/22.543970 ER -

RIS BibTeX