A W-band monolithic, singly balanced resistive mixer with low conversion loss

by: KW Chang, EW Lin, H Wang, KL Tan, WH Ku

Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters], Vol. 4, No. 9. (1994), pp. 301-302.

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Abstract

We report the design, measured and simulated performance of a novel W-band monolithic, singly balanced resistive FET mixer utilizing 0.1-μm pseudomorphic AlGaAs/InGaAs on GaAs HEMT technology. At an LO drive of +8 dBm, this mixer has exhibited a minimum measured conversion loss of 12.8 dB, nearly a 10 dB improvement over previously reported data in this frequency range. Furthermore, the mixer figure of merit, defined as P1-dB,in-PLO, is at least +2 dBm, which is nominally 6 dBm better than that of comparable diode mixers at W-band. These results indicate the excellent potential of this mixer for integration with other circuit components in fully monolithic subsystems

@article{citeulike:2762241, abstract = {We report the design, measured and simulated performance of a novel W-band monolithic, singly balanced resistive FET mixer utilizing 0.1-\μm pseudomorphic AlGaAs/InGaAs on GaAs HEMT technology. At an LO drive of +8 dBm, this mixer has exhibited a minimum measured conversion loss of 12.8 dB, nearly a 10 dB improvement over previously reported data in this frequency range. Furthermore, the mixer figure of merit, defined as P1-dB,in-PLO, is at least +2 dBm, which is nominally 6 dBm better than that of comparable diode mixers at W-band. These results indicate the excellent potential of this mixer for integration with other circuit components in fully monolithic subsystems}, author = {Chang, K. W. and Lin, E. W. and Wang, H. and Tan, K. L. and Ku, W. H. }, booktitle = {Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters]}, citeulike-article-id = {2762241}, doi = {10.1109/75.311514}, journal = {Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters]}, keywords = {balanced, mixer}, number = {9}, pages = {301--302}, posted-at = {2008-05-06 19:35:32}, priority = {2}, title = {A W-band monolithic, singly balanced resistive mixer with low conversion loss}, url = {http://dx.doi.org/10.1109/75.311514}, volume = {4}, year = {1994} }

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TY - JOUR ID - citeulike:2762241 L3 - citeulike-article-id:2762241 TI - A W-band monolithic, singly balanced resistive mixer with low conversion loss T2 - Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters] JF - Microwave and Guided Wave Letters, IEEE [see also IEEE Microwave and Wireless Components Letters] VL - 4 IS - 9 SP - 301 EP - 302 N2 - We report the design, measured and simulated performance of a novel W-band monolithic, singly balanced resistive FET mixer utilizing 0.1-μm pseudomorphic AlGaAs/InGaAs on GaAs HEMT technology. At an LO drive of +8 dBm, this mixer has exhibited a minimum measured conversion loss of 12.8 dB, nearly a 10 dB improvement over previously reported data in this frequency range. Furthermore, the mixer figure of merit, defined as P1-dB,in-PLO, is at least +2 dBm, which is nominally 6 dBm better than that of comparable diode mixers at W-band. These results indicate the excellent potential of this mixer for integration with other circuit components in fully monolithic subsystems KW - balanced KW - mixer AU - Chang, KW AU - Lin, EW AU - Wang, H AU - Tan, KL AU - Ku, WH PY - 1994/// UR - http://dx.doi.org/10.1109/75.311514 ER -

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