FDTD analysis of microwave active antenna including nonlinear model of FET transistor

by: Y Zhang, P Gardner, H Ghafouri-Shiraz, PS Hall

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on (2002), pp. 618-621.

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Abstract

In this paper, a non-linear circuit model of a FET has been incorporated into the finite-difference time-domain (FDTD) method when microwave active antennas are analysed. The FET, operating in class A mode, is biased and its non-linear properties (second harmonics) are investigated in a patch antenna configuration. The algorithm and the simulation results will be useful in the development of high power integrated active antenna modules.

@inproceedings{citeulike:2776060, abstract = {In this paper, a non-linear circuit model of a FET has been incorporated into the finite-difference time-domain (FDTD) method when microwave active antennas are analysed. The FET, operating in class A mode, is biased and its non-linear properties (second harmonics) are investigated in a patch antenna configuration. The algorithm and the simulation results will be useful in the development of high power integrated active antenna modules.}, author = {Zhang, Y. and Gardner, P. and Ghafouri-Shiraz, H. and Hall, P. S. }, booktitle = {Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on}, citeulike-article-id = {2776060}, journal = {Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on}, keywords = {active, analysis, antenna, fdtd, fet, microwave, model, nonlinear}, pages = {618--621}, posted-at = {2008-05-09 15:56:34}, priority = {2}, title = {FDTD analysis of microwave active antenna including nonlinear model of FET transistor}, url = {http://ieeexplore.ieee.org/xpls/abs\_all.jsp?arnumber=1187776}, year = {2002} }

RIS record

TY - CONF ID - citeulike:2776060 L3 - citeulike-article-id:2776060 TI - FDTD analysis of microwave active antenna including nonlinear model of FET transistor T2 - Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on JF - Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on SP - 618 EP - 621 N2 - In this paper, a non-linear circuit model of a FET has been incorporated into the finite-difference time-domain (FDTD) method when microwave active antennas are analysed. The FET, operating in class A mode, is biased and its non-linear properties (second harmonics) are investigated in a patch antenna configuration. The algorithm and the simulation results will be useful in the development of high power integrated active antenna modules. KW - active KW - analysis KW - antenna KW - fdtd KW - fet KW - microwave KW - model KW - nonlinear AU - Zhang, Y AU - Gardner, P AU - Ghafouri-Shiraz, H AU - Hall, PS PY - 2002/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1187776 ER -

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