High gain millimetric negative resistance low noise amplifiers

by: MT Hickson, P Gardner, DK Paul

Electronics Letters, Vol. 29, No. 16. (1993), pp. 1408-1409.

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Abstract

The limited gain available from GaAs FETs and HEMTs at millimetric frequencies can be overcome by using the devices in a negative resistance amplifier configuration. The advantage of the solid-state negative resistance amplifier over the transmission amplifier is that the gain available is not limited by the active device used. It has been shown that, over a narrow bandwidth, significantly higher gain can be obtained from a negative resistance amplifier, when compared to a transmission amplifier using the same device, while maintaining the same overall noise performance. This has been demonstrated experimentally using a 0.25 μm HEMT device

@article{citeulike:2776111, abstract = {The limited gain available from GaAs FETs and HEMTs at millimetric frequencies can be overcome by using the devices in a negative resistance amplifier configuration. The advantage of the solid-state negative resistance amplifier over the transmission amplifier is that the gain available is not limited by the active device used. It has been shown that, over a narrow bandwidth, significantly higher gain can be obtained from a negative resistance amplifier, when compared to a transmission amplifier using the same device, while maintaining the same overall noise performance. This has been demonstrated experimentally using a 0.25 \μm HEMT device}, author = {Hickson, M. T. and Gardner, P. and Paul, D. K. }, booktitle = {Electronics Letters}, citeulike-article-id = {2776111}, journal = {Electronics Letters}, keywords = {amplifier, gain, high, low, noise}, number = {16}, pages = {1408--1409}, posted-at = {2008-05-09 16:19:49}, priority = {2}, title = {High gain millimetric negative resistance low noise amplifiers}, url = {http://ieeexplore.ieee.org/xpls/abs\_all.jsp?arnumber=252461}, volume = {29}, year = {1993} }

RIS record

TY - JOUR ID - citeulike:2776111 L3 - citeulike-article-id:2776111 TI - High gain millimetric negative resistance low noise amplifiers T2 - Electronics Letters JF - Electronics Letters VL - 29 IS - 16 SP - 1408 EP - 1409 N2 - The limited gain available from GaAs FETs and HEMTs at millimetric frequencies can be overcome by using the devices in a negative resistance amplifier configuration. The advantage of the solid-state negative resistance amplifier over the transmission amplifier is that the gain available is not limited by the active device used. It has been shown that, over a narrow bandwidth, significantly higher gain can be obtained from a negative resistance amplifier, when compared to a transmission amplifier using the same device, while maintaining the same overall noise performance. This has been demonstrated experimentally using a 0.25 μm HEMT device KW - amplifier KW - gain KW - high KW - low KW - noise AU - Hickson, MT AU - Gardner, P AU - Paul, DK PY - 1993/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=252461 ER -

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