Device simulation for RF applications

by: RW Dutton, B Troyanovsky, Z Yu, T Arnborg, F Rotella, G Ma, J Sato-Iwanaga

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International (1997), pp. 301-304.

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Abstract

The rapid growth of wireless systems at radio frequencies (RF) is driving the need for improved analog circuit and device analysis at gigaHertz frequencies. This includes: low noise front ends, linear amplifiers, mixers, and power amplifiers. Moreover, the parasitic effects of capacitance and inductance, both on- and off-chip, require careful extraction and characterization in support of predictive modeling. While time-domain techniques work well for digital systems, often the spectral and dynamic range requirements for communications systems necessitate accurate analysis of harmonic content with frequency differences of a thousandfold or more. This paper demonstrates the applicability and unique strengths of device-level harmonic balance (HB) in the simulation and physical modeling of RF circuits

@inproceedings{citeulike:2776272, abstract = {The rapid growth of wireless systems at radio frequencies (RF) is driving the need for improved analog circuit and device analysis at gigaHertz frequencies. This includes: low noise front ends, linear amplifiers, mixers, and power amplifiers. Moreover, the parasitic effects of capacitance and inductance, both on- and off-chip, require careful extraction and characterization in support of predictive modeling. While time-domain techniques work well for digital systems, often the spectral and dynamic range requirements for communications systems necessitate accurate analysis of harmonic content with frequency differences of a thousandfold or more. This paper demonstrates the applicability and unique strengths of device-level harmonic balance (HB) in the simulation and physical modeling of RF circuits}, author = {Dutton, R. W. and Troyanovsky, B. and Yu, Z. and Arnborg, T. and Rotella, F. and Ma, G. and Sato-Iwanaga, J. }, booktitle = {Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International}, citeulike-article-id = {2776272}, doi = {10.1109/IEDM.1997.650386}, journal = {Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International}, keywords = {rf, simulation}, pages = {301--304}, posted-at = {2008-05-09 17:41:19}, priority = {2}, title = {Device simulation for RF applications}, url = {http://dx.doi.org/10.1109/IEDM.1997.650386}, year = {1997} }

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TY - CONF ID - citeulike:2776272 TI - Device simulation for RF applications T2 - Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International JF - Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International SP - 301 EP - 304 N2 - The rapid growth of wireless systems at radio frequencies (RF) is driving the need for improved analog circuit and device analysis at gigaHertz frequencies. This includes: low noise front ends, linear amplifiers, mixers, and power amplifiers. Moreover, the parasitic effects of capacitance and inductance, both on- and off-chip, require careful extraction and characterization in support of predictive modeling. While time-domain techniques work well for digital systems, often the spectral and dynamic range requirements for communications systems necessitate accurate analysis of harmonic content with frequency differences of a thousandfold or more. This paper demonstrates the applicability and unique strengths of device-level harmonic balance (HB) in the simulation and physical modeling of RF circuits KW - rf KW - simulation AU - Dutton, RW AU - Troyanovsky, B AU - Yu, Z AU - Arnborg, T AU - Rotella, F AU - Ma, G AU - Sato-Iwanaga, J PY - 1997/// UR - http://dx.doi.org/10.1109/IEDM.1997.650386 ER -

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