Distributed channel model for HEMT signal and noise parameters

@article{citeulike:2782935, abstract = {A new simple model for the signal and noise properties of a microwave FET or HEMT avoids the need for any explicit correlation between gate and drain noise sources by distributing the drain-to-gate capacitance and the drain noise source along the conducting channel. The new model applied to a commercial HEMT chip demonstrates a very good fit to measured scattering and noise parameter data}, author = {Gardner, P. and Paul, D. K. }, booktitle = {Electronics Letters}, citeulike-article-id = {2782935}, journal = {Electronics Letters}, keywords = {amplifier, channel, distributed, microwave, model, noise, parameter, signal}, number = {22}, pages = {2063--2064}, posted-at = {2008-05-10 15:15:14}, priority = {2}, title = {Distributed channel model for HEMT signal and noise parameters}, url = {http://ieeexplore.ieee.org/xpls/abs\_all.jsp?arnumber=204582}, volume = {28}, year = {1992} }

TY - JOUR ID - citeulike:2782935 TI - Distributed channel model for HEMT signal and noise parameters T2 - Electronics Letters JF - Electronics Letters VL - 28 IS - 22 SP - 2063 EP - 2064 N2 - A new simple model for the signal and noise properties of a microwave FET or HEMT avoids the need for any explicit correlation between gate and drain noise sources by distributing the drain-to-gate capacitance and the drain noise source along the conducting channel. The new model applied to a commercial HEMT chip demonstrates a very good fit to measured scattering and noise parameter data KW - amplifier KW - channel KW - distributed KW - microwave KW - model KW - noise KW - parameter KW - signal AU - Gardner, P AU - Paul, DK PY - 1992/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=204582 ER -