Zero power consumption Si/SiGe HBT SPDT T/R antenna switch

@inproceedings{citeulike:2801486, abstract = {Design and performance of a new transmit/receive (T/R) antenna switch for mobile communication systems at 1.8 GHz using Si/SiGe Heterojunction Bipolar Transistors (HBT) are described. The switch is designed to be a part of a transceiver front end for DECT and DCS 1800 applications. This circuit requires no external DC bias. The insertion loss in the receive arm is \<1.5 dB and the isolation \>25 dB at the operating frequency}, author = {Gotzfried, R. and Itoh, T. and Luy, J. F. and Schumacher, H. }, booktitle = {Microwave Symposium Digest, 1996., IEEE MTT-S International}, citeulike-article-id = {2801486}, doi = {10.1109/MWSYM.1996.511024}, journal = {Microwave Symposium Digest, 1996., IEEE MTT-S International}, keywords = {antenna, transceiver}, pages = {651--653 vol.2}, posted-at = {2008-05-15 13:23:25}, priority = {2}, title = {Zero power consumption Si/SiGe HBT SPDT T/R antenna switch}, url = {http://dx.doi.org/10.1109/MWSYM.1996.511024}, volume = {2}, year = {1996} }

TY - CONF ID - citeulike:2801486 L3 - citeulike-article-id:2801486 TI - Zero power consumption Si/SiGe HBT SPDT T/R antenna switch T2 - Microwave Symposium Digest, 1996., IEEE MTT-S International JF - Microwave Symposium Digest, 1996., IEEE MTT-S International VL - 2 SP - 651 EP - 653 vol.2 N2 - Design and performance of a new transmit/receive (T/R) antenna switch for mobile communication systems at 1.8 GHz using Si/SiGe Heterojunction Bipolar Transistors (HBT) are described. The switch is designed to be a part of a transceiver front end for DECT and DCS 1800 applications. This circuit requires no external DC bias. The insertion loss in the receive arm is <1.5 dB and the isolation >25 dB at the operating frequency KW - antenna KW - transceiver AU - Gotzfried, R AU - Itoh, T AU - Luy, JF AU - Schumacher, H PY - 1996/// UR - http://dx.doi.org/10.1109/MWSYM.1996.511024 ER -