HBT active antenna as a self oscillating Doppler sensor

by: MJ Kelly, JAC Stewart, AD Patterson

Microwave Symposium Digest, 1997., IEEE MTT-S International, Vol. 2 (1997), pp. 1065-1068 vol.2.

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Abstract

This paper investigates the use of Heterojunction Bipolar Transistors (HBTs) as the working device in an active antenna for a self detection system. The devices used here are GaInP-GaAs HBT's from the GMMT F40 process. The design and performance of an active antenna based on this device is presented. A new large signal model is used to develop the active antenna described in this paper. The element oscillates at 11.40 GHz and produces approximately 5 mW of radiated power. A minimum detectable signal (MDS) of -99 dBm in a 10 Hz bandwidth has been measured

@inproceedings{citeulike:2801994, abstract = {This paper investigates the use of Heterojunction Bipolar Transistors (HBTs) as the working device in an active antenna for a self detection system. The devices used here are GaInP-GaAs HBT's from the GMMT F40 process. The design and performance of an active antenna based on this device is presented. A new large signal model is used to develop the active antenna described in this paper. The element oscillates at 11.40 GHz and produces approximately 5 mW of radiated power. A minimum detectable signal (MDS) of -99 dBm in a 10 Hz bandwidth has been measured}, author = {Kelly, M. J. and Stewart, J. A. C. and Patterson, A. D. }, booktitle = {Microwave Symposium Digest, 1997., IEEE MTT-S International}, citeulike-article-id = {2801994}, doi = {10.1109/MWSYM.1997.602985}, journal = {Microwave Symposium Digest, 1997., IEEE MTT-S International}, keywords = {active, antenna, doppler, oscillator}, pages = {1065--1068 vol.2}, posted-at = {2008-05-15 16:23:14}, priority = {2}, title = {HBT active antenna as a self oscillating Doppler sensor}, url = {http://dx.doi.org/10.1109/MWSYM.1997.602985}, volume = {2}, year = {1997} }

RIS record

TY - CONF ID - citeulike:2801994 L3 - citeulike-article-id:2801994 TI - HBT active antenna as a self oscillating Doppler sensor T2 - Microwave Symposium Digest, 1997., IEEE MTT-S International JF - Microwave Symposium Digest, 1997., IEEE MTT-S International VL - 2 SP - 1065 EP - 1068 vol.2 N2 - This paper investigates the use of Heterojunction Bipolar Transistors (HBTs) as the working device in an active antenna for a self detection system. The devices used here are GaInP-GaAs HBT's from the GMMT F40 process. The design and performance of an active antenna based on this device is presented. A new large signal model is used to develop the active antenna described in this paper. The element oscillates at 11.40 GHz and produces approximately 5 mW of radiated power. A minimum detectable signal (MDS) of -99 dBm in a 10 Hz bandwidth has been measured KW - active KW - antenna KW - doppler KW - oscillator AU - Kelly, MJ AU - Stewart, JAC AU - Patterson, AD PY - 1997/// UR - http://dx.doi.org/10.1109/MWSYM.1997.602985 ER -

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