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Ground-state properties of gapped grapheneby: A Qaiumzadeh, R Asgari
(20 Jul 2008)
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AbstractWe study the effect of band gap on the ground-state properties of Dirac electrons in a doped graphene within the random phase approximation at zero temperature. Band gap dependence of the exchange, correlation and ground-state energies and the compressibility are calculated. An energy minimum takes place in the region of small band gap due to slowly varying of the kinetic energy. We additionally show that the conductance in the gapped graphene is smaller than gapless one. We also calculate the band gap dependence of charge compressibility and it exhibits a maximum due to a competition between kinetic energy and Coulomb interactions.
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