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Measurement of latent tracks in amorphous SiO2 using small angle X-ray scatteringNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. In Press, Corrected Proof
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AbstractIn this paper we present preliminary yet promising results on the measurement of latent ion tracks in amorphous, 2 [mu]m thick SiO2 layers using small angle X-ray scattering (SAXS). The tracks were generated by ion irradiation with 89 MeV Au ions to fluences between 3 נ1010 and 3 נ1012 ions/cm2. Transmission SAXS measurements show distinct scattering from the irradiated SiO2 as compared to the unirradiated material. Analysis of the SAXS spectra using a cylindrical model suggests a core-shell like density distribution in the ion tracks with a lower density core and a higher density shell as compared to unirradiated material. The total track radius of ~48 Å is in very good agreement with previous experiments and calculations based on an inelastic thermal spike model.
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