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mllees gaas [11 articles]

Artikler nylig sendt til mllees bibliotek klassifisert med nøkkelordet gaas. You can also see everyone's gaas.
  • Plasmonic nanoparticle enhanced light absorption in GaAs solar cells
    Applied Physics Letters, Vol. 93, No. 12. (2008)
    by Keisuke Nakayama, Katsuaki Tanabe, Harry A Atwater
    posted to solar plasmonic photovoltaic gaas by mllee on 2008-09-23 15:05:03 as **
  • Intermixing and lateral composition modulation in GaAs/GaSb short period superlattices
    Journal of Applied Physics, Vol. 94, No. 3. (2003), pp. 1667-1675.
    by C Dorin, Mirecki J Millunchick, C Wauchope
    posted to gaas gaassb gasb lateralcompositionmodulation phaseseparation sps by mllee on 2008-07-24 15:19:18 as **
  • Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy
    Physical Review B (Condensed Matter and Materials Physics), Vol. 77, No. 15. (2008)
    by C Colombo, D Spirkoska, M Frimmer, G Abstreiter, Fontcuberta
    posted to ssmbe onr nanowire gaas catalyst-free by mllee on 2008-07-22 15:29:00 as **
  • Threading dislocation reduction mechanisms in low-temperature-grown GaAs
    Journal of Applied Physics, Vol. 86, No. 9. (1999), pp. 4836-4842.
    by SK Mathis, XH Wu, AE Romanov, JS Speck
    posted to dislocation doping gaas ltgaas by mllee on 2008-06-12 20:19:43 as **
  • <emphasis emphasistype="italic">In Situ</emphasis> Surface Passivation and CMOS-Compatible Palladium&#x2013;Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs
    Electron Device Letters, IEEE, Vol. 29, No. 6. (2008), pp. 553-556.
    by HC Chin, M Zhu, CH Tung, GS Samudra, YC Yeo
    posted to ald gaas mosfet by mllee on 2008-05-26 13:19:54 as **
  • Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?
    Physical Review Letters, Vol. 99, No. 14. (2007)
    by Frank Glas, Jean C Harmand, Gilles Patriarche
    posted to 111b gaas nanowire stackingfaults wurtzite by mllee on 2008-04-29 23:04:46 as **
  • “A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular-beam epitaxy”
    Journal of Applied Physics, Vol. 69, No. 4. (1991), pp. 2219-2223.
    by KC Rajkumar, P Chen, A Madhukar
    posted to 111b gaas mbe twins by mllee on 2008-02-28 20:22:49 as **
  • Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular-beam epitaxy
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 2. (1988), pp. 638-641.
    by K Elcess, JL Liévin, CG Fonstad
    posted to 111b gaas mbe by mllee on 2008-02-28 20:16:55 as **
  • Investigation of (111) strained layers: Growth, photoluminescence, and internal electric fields
    Journal of Applied Physics, Vol. 71, No. 11. (1992), pp. 5531-5538.
    by PJ Harshman, S Wang
    posted to 111b gaas by mllee on 2008-02-28 20:10:08 as **
  • Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth
    Papers from the 18th north american conference on molecular beam epitaxy, Vol. 18, No. 3. (2000), pp. 1566-1571.
    by Yeonjoon Park, Michael J Cich, Rian Zhao, Petra Specht, Eicke R Weber, Eric Stach, Shinji Nozaki
    posted to 111b gaas mbe tem by mllee on 2008-02-28 18:06:51 as **
  • Molecular-beam epitaxy on exact and vicinal GaAs(1-bar 1-bar 1-bar) substrates
    Proceedings of the 12th molecular-beam epitaxy workshop, Vol. 11, No. 3. (1993), pp. 779-782.
    by K Yang, LJ Schowalter, BK Laurich, IH Campell, DL Smith
    posted to 111b gaas by mllee on 2008-02-28 18:00:43 as **
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