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mpicketts resistance-switch [89 articles]

Artikler nylig sendt til mpicketts bibliotek klassifisert med nøkkelordet resistance-switch. You can also see everyone's resistance-switch.
  • Memristive switching mechanism for metal//oxide//metal nanodevices
    Nat Nano, Vol. 3, No. 7. (July 2008), pp. 429-433.
    by Joshua J Yang, Matthew D Pickett, Xuema Li, Douglas A Ohlberg, Duncan R Stewart, Stanley R Williams
    posted to c-auth oxide resistance-switch titanium by mpickett on 2008-07-14 02:59:12 as read
  • Hysteretic current--voltage characteristics and resistance switching at a rectifying Ti/Pr[sub 0.7]Ca[sub 0.3]MnO[sub 3] interface
    Applied Physics Letters, Vol. 85, No. 18. (2004), pp. 4073-4075.
    by A Sawa, T Fujii, M Kawasaki, Y Tokura
    posted to oxide pcmo resistance-switch by mpickett on 2008-04-09 20:25:03 as read
  • Colossal electroresistance of a Pr0.7Ca0.3MnO 3 thin film at room temperature
    Phys. Rev. B Condens. Matter Mater. Phys., Vol. 70, No. 22. (2004)
    by A Odagawa, H Sato, IH Inoue, H Akoh, M Kawasaki, Y Tokura, T Kanno, H Adachi
    posted to oxide pcmo resistance-switch by mpickett on 2008-04-09 20:22:11 as read
  • Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag--La[sub 0.7]Ca[sub 0.3]MnO[sub 3]--Pt sandwiches
    Applied Physics Letters, Vol. 86, No. 17. (2005)
    by R Dong, Q Wang, LD Chen, DS Shang, TL Chen, XM Li, WQ Zhang
    posted to lcmo resistance-switch by mpickett on 2008-04-09 20:12:03 as read
  • Conductivity switching characteristics and reset currents in NiO films
    Applied Physics Letters, Vol. 86, No. 9. (2005)
    by S Seo, MJ Lee, DH Seo, SK Choi, DS Suh, YS Joung, IK Yoo, IS Byun, IR Hwang, SH Kim, BH Park
    posted to nickel oxide resistance-switch by mpickett on 2008-04-09 20:00:48 as read
  • Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted
    Applied Physics Letters, Vol. 92, No. 1. (2008)
    by Qi Liu, Weihua Guan, Shibing Long, Rui Jia, Ming Liu, Junning Chen
    posted to oxide resistance-switch space-charge-limited zirconium by mpickett on 2008-04-09 19:38:34 as read
  • Modified resistive switching behavior of ZrO[sub 2] memory films based on the interface layer formed by using Ti top electrode
    Journal of Applied Physics, Vol. 102, No. 9. (2007)
    by Chih Y Lin, Chung Y Wu, Chen Y Wu, Tseung Y Tseng, Chenming Hu
    posted to oxide resistance-switch zirconium by mpickett on 2008-04-09 19:34:38 as read
  • Liquid injection ALD of Pb (Zr,Ti) Ox thin films by a combination of self-regulating component oxide processes
    J Electrochem Soc, Vol. 154, No. 12. (2007)
    by T Watanabe, S Hoffmann-Eifert, F Peter, S Mi, C Jia, CS Hwang, R Waser
    posted to atomic-layer-deposition oxide resistance-switch titanium by mpickett on 2008-04-09 19:32:39 as read
  • Localized switching mechanism in resistive switching of atomic-layer-deposited TiO[sub 2] thin films
    Applied Physics Letters, Vol. 90, No. 24. (2007)
    by Kyung M Kim, Byung J Choi, Cheol S Hwang
    posted to filament oxide resistance-switch titanium by mpickett on 2008-04-09 19:29:19 as read
  • Switching characteristics of Cu[sub 2]O metal-insulator-metal resistive memory
    Applied Physics Letters, Vol. 91, No. 12. (2007)
    by A Chen, S Haddad, YC Wu, Z Lan, TN Fang, S Kaza
    posted to copper oxide resistance-switch by mpickett on 2008-04-09 19:28:18 as read
  • Anode-interface localized filamentary mechanism in resistive switching of TiO[sub 2] thin films
    Applied Physics Letters, Vol. 91, No. 1. (2007)
    by Kyung M Kim, Byung J Choi, Yong C Shin, Seol Choi, Cheol S Hwang
    posted to conduction oxide resistance-switch space-charge-limited titanium by mpickett on 2008-04-09 19:26:25 as read
  • Resistance switching of copper doped MoO[sub x] films for nonvolatile memory applications
    Applied Physics Letters, Vol. 90, No. 12. (2007)
    by Dongsoo Lee, Dong J Seong, Inhwa Jo, F Xiang, R Dong, Seokjoon Oh, Hyunsang Hwang
    posted to molybdenum oxide resistance-switch by mpickett on 2008-04-09 19:21:39 as read
  • Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films
    Applied Physics Letters, Vol. 90, No. 5. (2007)
    by Kyooho Jung, Hongwoo Seo, Yongmin Kim, Hyunsik Im, Jinpyo Hong, Jae W Park, Jeon K Lee
    posted to conduction nickel oxide resistance-switch by mpickett on 2008-04-09 19:19:01 as read
  • Low-power switching of nonvolatile resistive memory using hafnium oxide
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, Vol. 46, No. 4 B. (2007), pp. 2175-2179.
    by HY Lee, PS Chen, CC Wang, S Maikap, PJ Tzeng, CH Lin, LS Lee, MJ Tsai
    posted to hafnium oxide resistance-switch by mpickett on 2008-04-09 19:16:14 as read
  • Current-driven insulator--conductor transition and nonvolatile memory in chromium-doped SrTiO[sub 3] single crystals
    Applied Physics Letters, Vol. 78, No. 23. (2001), pp. 3738-3740.
    by Y Watanabe, JG Bednorz, A Bietsch, Ch, D Widmer, A Beck, SJ Wind
    posted to oxide resistance-switch srtio by mpickett on 2008-04-09 19:13:31 as read
  • Reversible resistance switching behaviors of Pt/NiO/Pt structures
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, Vol. 46, No. 8 A. (2007), pp. 5205-5207.
    by DW Kim, BH Park, R Jung, S Seo
    posted to nickel oxide resistance-switch by mpickett on 2008-04-09 19:07:42 as read
  • Resistive Switching in Pt/Al[sub 2]O[sub 3]/TiO[sub 2]/Ru Stacked Structures
    Electrochemical and Solid-State Letters, Vol. 9, No. 12. (2006), pp. G343-G346.
    by Kyung M Kim, Byung J Choi, Bon W Koo, Seol Choi, Doo S Jeong, Cheol S Hwang
    posted to aluminum oxide resistance-switch titanium by mpickett on 2008-04-09 19:04:40 as read
  • Impedance spectroscopy characterization of resistance switching NiO thin films prepared through atomic layer deposition
    Applied Physics Letters, Vol. 89, No. 22. (2006)
    by Yil H You, Byung S So, Jin H Hwang, Wontae Cho, Sun S Lee, Taek M Chung, Chang G Kim, Ki S An
    posted to filament nickel oxide resistance-switch by mpickett on 2008-04-09 19:03:59 as read
  • Influence of carrier injection on resistive switching of TiO[sub 2] thin films with Pt electrodes
    Applied Physics Letters, Vol. 89, No. 16. (2006)
    by Kyung M Kim, Byung J Choi, Doo S Jeong, Cheol S Hwang, Seungwu Han
  • Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La[sub 0.7]Ca[sub 0.3]MnO[sub 3]/Pt heterostructures
    Physical Review B (Condensed Matter and Materials Physics), Vol. 73, No. 24. (2006)
    by DS Shang, Q Wang, LD Chen, R Dong, XM Li, WQ Zhang
    posted to lcmo oxide resistance-switch smooth-switching trapping by mpickett on 2008-04-09 18:59:51 as read
  • Current switching of resistive states in magnetoresistive manganites
    NATURE, Vol. 388, No. 6637. (1997), pp. 50-52.
    posted to lcmo oxide resistance-switch by mpickett on 2008-04-09 18:50:32 as read
  • High-speed resistive switching of TiO2/TiN nano-crystalline thin film
    Jpn J Appl Phys Part 2 Letter, Vol. 45, No. 8-11. (2006)
    posted to oxide resistance-switch tem titanium xrd by mpickett on 2008-04-09 18:35:14 as read
  • Hysteretic current--voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO[sub 3]/SrTi[sub 0.99]Nb[sub 0.01]O[sub 3]
    Applied Physics Letters, Vol. 86, No. 1. (2005)
    by T Fujii, M Kawasaki, A Sawa, H Akoh, Y Kawazoe, Y Tokura
    posted to oxide resistance-switch srruo by mpickett on 2008-04-09 18:28:53 as read
  • Reproducible resistance switching in polycrystalline NiO films
    Applied Physics Letters, Vol. 85, No. 23. (2004), pp. 5655-5657.
    by S Seo, MJ Lee, DH Seo, EJ Jeoung, DS Suh, YS Joung, IK Yoo, IR Hwang, SH Kim, IS Byun, JS Kim, JS Choi, BH Park
    posted to nickel oxide resistance-switch by mpickett on 2008-04-09 18:21:54 as read
  • Unipolar resistive switching in CoFeB/MgO/CoFeB magnetic tunnel junction
    Applied Physics Letters, Vol. 92, No. 11. (2008)
    by Chikako Yoshida, Masaki Kurasawa, Young M Lee, Masaki Aoki, Yoshihiro Sugiyama
    posted to magnesium oxide resistance-switch by mpickett on 2008-04-09 18:19:22 as read
  • A non-filamentary switching action in thermally grown silicon dioxide films
    British Journal of Applied Physics, Vol. 18, No. 1. (1967), pp. 29-32.
    by DR Lamb, PC Rundle
    posted to conduction defect-assisted oxide resistance-switch silicon by mpickett on 2008-04-09 18:05:05 as read
  • New Conduction and Reversible Memory Phenomena in Thin Insulating Films
    Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences (1934-1990), Vol. 301, No. 1464. (3 October 1967), pp. 77-102.
    by JG Simmons, RR Verderber
    posted to oxide resistance-switch silicon by mpickett on 2008-04-08 23:03:15 as read
  • Bistable switching in Zr---ZrO2---Au junctions
    Journal of Non-Crystalline Solids, Vol. 2 (January 1970), pp. 284-291.
    by KC Park, S Basavaiah
    posted to oxide resistance-switch zro by mpickett on 2008-04-08 22:46:00 as read
  • Electrode effects and bistable switching of amorphous Nb2O5 diodes
    Solid-State Electronics, Vol. 13, No. 7. (July 1970), pp. 1033-1038.
    by TW Hickmott, WR Hiatt
    posted to niobium oxide resistance-switch by mpickett on 2008-04-08 22:40:06 as read
  • Bistable switching and memory devices
    Journal of Non-Crystalline Solids, Vol. 2 (January 1970), pp. 316-333.
    by PO Sliva, G Dir, C Griffiths
    posted to resistance-switch by mpickett on 2008-04-08 22:37:37 as read
  • Switching properties of thin Nio films
    Solid-State Electronics, Vol. 7, No. 11. (November 1964), pp. 785-790.
    by JF Gibbons, WE Beadle
    posted to nickel oxide resistance-switch by mpickett on 2008-04-08 22:25:12 as read
  • A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories
    Advanced Materials, Vol. 19, No. 1. (2007), pp. 73-76.
    by MJ Lee, S Seo, DC Kim, SE Ahn, D H Seo, IK Yoo, IG Baek, DS Kim, IS Byun, SH Kim, IR Hwang, JS Kim, SH Jeon, B H Park
    posted to nickel oxide resistance-switch titanium by mpickett on 2008-04-08 22:23:49 as read
  • Monte Carlo simulation of current-voltage characteristics in metal-insulator-metal thin film structures
    Thin Solid Films, Vol. 433, No. 1-2. (2 June 2003), pp. 321-325.
    by S Gravano, E Amr, RD Gould, Abu M Samra
    posted to filament m-i-m resistance-switch by mpickett on 2008-04-08 22:16:44 as read
  • Lowering the switching current of resistance random access memory using a hetero junction structure consisting of transition metal oxides
    Jpn J Appl Phys Part 2 Letter, Vol. 45, No. 37-41. (2006)
    posted to nickel oxide resistance-switch titanium by mpickett on 2008-04-08 22:09:11 as read
  • Electrical observations of filamentary conductions for the resistive memory switching in NiO films
    Applied Physics Letters, Vol. 88, No. 20. (2006)
    by DC Kim, S Seo, SE Ahn, DS Suh, MJ Lee, BH Park, IK Yoo, IG Baek, HJ Kim, EK Yim, JE Lee, SO Park, HS Kim, In U Chung, JT Moon, BI Ryu
    posted to filament nickel oxide resistance-switch by mpickett on 2008-04-08 22:01:35 as read
  • Electric-pulse-induced reversible resistance change effect in magnetoresistive films
    Applied Physics Letters, Vol. 76, No. 19. (2000), pp. 2749-2751.
    by SQ Liu, NJ Wu, A Ignatiev
    posted to oxide pcmo resistance-switch by mpickett on 2008-04-08 21:55:58 as read
  • Identification of a determining parameter for resistive switching of TiO[sub 2] thin films
    Applied Physics Letters, Vol. 86, No. 26. (2005)
    by Christina Rohde, Byung J Choi, Doo S Jeong, Seol Choi, Jin S Zhao, Cheol S Hwang
    posted to oxide resistance-switch titanium by mpickett on 2008-04-08 21:51:38 as read
  • Bistable resistive states of amorphous SrRuO[sub 3] thin films
    Applied Physics Letters, Vol. 92, No. 13. (2008)
    by JY Son, YH Shin, CS Park
    posted to oxide resistance-switch srruo by mpickett on 2008-04-05 00:22:50 as read
  • A model for filament growth and switching in amorphous oxide films
    Journal of Non-Crystalline Solids, Vol. 4 (April 1970), pp. 593-612.
    posted to amorphous filament forming oxide resistance-switch silicon by mpickett on 2008-04-03 18:12:09 as read
  • BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES
    Applied Physics Letters, Vol. 6, No. 6. (1965), pp. 106-108.
    by WR Hiatt, TW Hickmott
    posted to m-i-m niobium oxide resistance-switch by mpickett on 2008-04-02 19:57:07 as read
  • Low-Frequency Negative Resistance in Thin Anodic Oxide Films
    Journal of Applied Physics, Vol. 33, No. 9. (1962), pp. 2669-2682.
    by TW Hickmott
    posted to oxide resistance-switch by mpickett on 2008-04-02 19:30:12 as read
  • Avalanche-Induced Negative Resistance in Thin Oxide Films
    Journal of Applied Physics, Vol. 36, No. 1. (1965), pp. 184-187.
    by KL Chopra
    posted to niobium oxide resistance-switch titanium by mpickett on 2008-04-02 19:27:35 as read
  • Reversible resistive switching of SrTiO[sub x] thin films for nonvolatile memory applications
    Applied Physics Letters, Vol. 88, No. 8. (2006)
    by Dooho Choi, Dongsoo Lee, Hyunjun Sim, Man Chang, Hyunsang Hwang
    posted to oxide resistance-switch srtio by mpickett on 2008-04-02 19:22:16 as read
  • Resistive switching of rose bengal devices: A molecular effect?
    Journal of Applied Physics, Vol. 100, No. 8., 094504.
    by Silvia Karthäuser, Björn Lüssem, Martin Weides, Manuela Alba, Astrid Besmehn, Robert Oligschlaeger, Rainer Waser
    posted to molecular resistance-switch by mpickett on 2008-04-02 19:14:37 as read
  • Electroforming and Switching in Oxides of Transition Metals: The Role of Metal-Insulator Transition in the Switching Mechanism
    Journal of Solid State Chemistry, Vol. 122, No. 1. (15 February 1996), pp. 95-99.
    posted to metal oxide resistance-switch by mpickett on 2008-04-02 19:04:49 as read
  • Molecule-Independent Electrical Switching in Pt/Organic Monolayer/Ti Devices
    Nano Lett., Vol. 4, No. 1. (14 January 2004), pp. 133-136.
    by DR Stewart, DAA Ohlberg, PA Beck, Y Chen, RS Williams, JO Jeppesen, KA Nielsen, JF Stoddart
    posted to molecular oxide resistance-switch titanium by mpickett on 2008-04-02 18:55:30 as read
  • Nanoscale molecular-switch devices fabricated by imprint lithography
    Applied Physics Letters, Vol. 82, No. 10. (2003), pp. 1610-1612.
    by Yong Chen, Douglas AA Ohlberg, Xuema Li, Duncan R Stewart, Stanley R Williams, Jan O Jeppesen, Kent A Nielsen, Fraser J Stoddart, Deirdre L Olynick, Erik Anderson
    posted to molecular resistance-switch by mpickett on 2008-04-02 18:44:56 as read
  • Improvement of resistance switching characteristics in NiO films obtained from controlled Ni oxidation
    Non-Volatile Memory Technology Symposium, 2007. NVMTS '07 (2007), pp. 1-4.
    by L Courtade, Ch Turquat, Ch Muller, JG Lisoni, DJ Wouters
    posted to nickel oxide resistance-switch by mpickett on 2008-04-02 02:17:02 as read
  • Resistance switching of CuTCNQ nanowires developed for high-density memory devices
    Non-Volatile Memory Technology Symposium, 2007. NVMTS '07 (2007), pp. 45-48.
    posted to copper nanowire resistance-switch tcnq by mpickett on 2008-04-02 02:15:48 as read
  • Set Power Dependency on the Resistive Switching in Cr-doped SrZrO<inf>3</inf> Thin Films for Nonvolatile Memory Devices
    Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on (2007), pp. 46-47.
    by Jae-Wan Park, Kyooho Jung, Min K Yang, Jong-Wan Park, Jeon-Kook Lee
    posted to oxide resistance-switch srzro3 by mpickett on 2008-04-02 02:09:19 as read
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