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rices Eaglesham [11 articles]

Nylige artikler sendt til rices bibliotek av forfatteren Eaglesham. Du kan også see everyone s Eaglesham.
  • Structural relaxation and defect annihilation in pure amorphous silicon
    Physical Review B, Vol. 44, No. 8. (1991), 3702.
    by S Roorda, WC Sinke, JM Poate, DC Jacobson, S Dierker, BS Dennis, DJ Eaglesham, F Spaepen, P Fuoss
    posted to physrev by rice on 2008-06-19 15:38:50 as **
  • Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si
    Applied Physics Letters, Vol. 71, No. 3. (1997), pp. 389-391.
    by S Libertino, JL Benton, DC Jacobson, DJ Eaglesham, JM Poate, S Coffa, Kringho, PG Fuochi, M Lavalle
    posted to apl by rice on 2008-05-07 07:02:24 as **
  • Transient enhanced diffusion of Sb and B due to MeV silicon implants
    Applied Physics Letters, Vol. 70, No. 24. (1997), pp. 3281-3283.
    by DJ Eaglesham, TE Haynes, HJ Gossmann, DC Jacobson, PA Stolk, JM Poate
    posted to apl by rice on 2008-05-07 06:54:01 as **
  • The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si
    Applied Physics Letters, Vol. 70, No. 22. (1997), pp. 3002-3004.
    by S Libertino, JL Benton, DC Jacobson, DJ Eaglesham, JM Poate, S Coffa, PG Fuochi, M Lavalle
    posted to apl by rice on 2008-05-07 06:53:58 as **
  • B diffusion and clustering in ion implanted Si: The role of B cluster precursors
    Applied Physics Letters, Vol. 70, No. 17. (1997), pp. 2285-2287.
    by L Pelaz, M Jaraiz, GH Gilmer, HJ Gossmann, CS Rafferty, DJ Eaglesham, JM Poate
    posted to apl by rice on 2008-05-07 06:53:56 as **
  • Implantation and transient B diffusion in Si: The source of the interstitials
    Applied Physics Letters, Vol. 65, No. 18. (1994), pp. 2305-2307.
    by DJ Eaglesham, PA Stolk, HJ Gossmann, JM Poate
    posted to apl by rice on 2008-05-07 06:45:19 as **
  • Electrical signatures and thermal stability of interstitial clusters in ion implanted Si
    Journal of Applied Physics, Vol. 84, No. 9. (1998), pp. 4749-4756.
    by JL Benton, K Halliburton, S Libertino, DJ Eaglesham, S Coffa
    posted to jap by rice on 2008-04-24 10:07:04 as **
  • Ion beams in silicon processing and characterization
    Journal of Applied Physics, Vol. 81, No. 10. (1997), pp. 6513-6561.
    by E Chason, ST Picraux, JM Poate, JO Borland, MI Current, Diaz, DJ Eaglesham, OW Holland, ME Law, CW Magee, JW Mayer, J Melngailis, AF Tasch
    posted to jap by rice on 2008-04-24 09:59:00 as **
  • Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
    Journal of Applied Physics, Vol. 81, No. 9. (1997), pp. 6031-6050.
    by PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, GH Gilmer, M Jara\iz, JM Poate, HS Luftman, TE Haynes
    posted to jap by rice on 2008-04-24 09:58:55 as **
  • Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon
    Materials Science in Semiconductor Processing, Vol. 1, No. 1. (1 April 1998), pp. 17-25.
    by Aditya Agarwal, Gossmann, DJ Eaglesham, L Pelaz, SB Herner, DC Jacobson, TE Haynes, R Simonton
    posted to ion-implanted by rice on 2008-04-24 06:05:46 as **
  • Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion
    Materials Science and Engineering A, Vol. 253, No. 1-2. (30 September 1998), pp. 269-274.
    by Aditya Agarwal, Gossmann, DJ Eaglesham, L Pelaz, DC Jacobson, JM Poate, TE Haynes
    posted to ion-implanted by rice on 2008-04-24 05:59:35 as **
    • NB: Du kan sitere denne siden som: http://www.citeulike.org/user/rice/author/Eaglesham

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