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rices Williams [11 articles]

Nylige artikler sendt til rices bibliotek av forfatteren Williams. Du kan også see everyone s Williams.
  • Preferential Amorphization at Extended Defects of Self-Ion-Irradiated Silicon
    Physical Review Letters, Vol. 82, No. 4. (25 January 1999), 771.
    by RD Goldberg, JS Williams, RG Elliman
    posted to physrev by rice on 2008-06-21 05:36:53 as **
  • Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon
    Physical Review Letters, Vol. 55, No. 14. (1985), 1482.
    by JS Williams, RG Elliman, WL Brown, TE Seidel
    posted to physrev by rice on 2008-06-21 05:31:06 as **
  • Crystalline-to-amorphous transition for Si-ion irradiation of Si(100)
    Physical Review B, Vol. 44, No. 16. (15 October 1991), 9118.
    by Peter J Schultz, C Jagadish, MC Ridgway, RG Elliman, JS Williams
    posted to physrev by rice on 2008-06-19 15:38:57 as **
  • Photocurrent probe of field-dependent mobility in organic thin-film transistors
    Applied Physics Letters, Vol. 87, No. 20. (2005)
    by M Breban, DB Romero, S Mezhenny, VW Ballarotto, ED Williams
    posted to apl by rice on 2008-05-07 08:25:56 as **
  • Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon
    Applied Physics Letters, Vol. 82, No. 18. (2003), pp. 2987-2989.
    by DH Macdonald, H Maeckel, S Doshi, W Brendle, A Cuevas, JS Williams, MJ Conway
    posted to apl by rice on 2008-05-07 07:25:43 as **
  • Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation
    Applied Physics Letters, Vol. 77, No. 26. (2000), pp. 4280-4282.
    by JS Williams, Xianfang Zhu, MC Ridgway, MJ Conway, BC Williams, F Fortuna, MO Ruault, H Bernas
    posted to apl by rice on 2008-05-07 07:16:15 as **
  • Relationship between secondary defects and electrical activation in ion-implanted, rapidly annealed GaAs
    Applied Physics Letters, Vol. 48, No. 1. (1986), pp. 38-40.
    by SJ Pearton, R Hull, DC Jacobson, JM Poate, JS Williams
    posted to apl by rice on 2008-05-06 17:27:58 as **
  • Diffusion and precipitation in amorphous Si
    Applied Physics Letters, Vol. 46, No. 5. (1985), pp. 478-480.
    by RG Elliman, JM Gibson, DC Jacobson, JM Poate, JS Williams
    posted to apl by rice on 2008-05-06 17:20:59 as **
  • Dose dependence of residual lattice disorder in ion-implanted and annealed silicon
    Applied Physics Letters, Vol. 30, No. 7. (1977), pp. 322-323.
    by CE Christodoulides, WA Grant, JS Williams
    posted to apl by rice on 2008-05-06 16:53:15 as **
  • Implantation temperature dependence of electrical activation, solubility, and diffusion of implanted Te, Cd, and Sn in GaAs
    Journal of Applied Physics, Vol. 65, No. 3. (1989), pp. 1089-1098.
    by SJ Pearton, JS Williams, KT Short, ST Johnson, DC Jacobsen, JM Poate, JM Gibson, DO Boerma
    posted to jap by rice on 2008-04-24 08:49:32 as **
  • Ion-beam-induced crystallization and amorphization of silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 19-20, No. Part 2. (1987), pp. 435-442.
    by RG Elliman, JS Williams, WL Brown, A Leiberich, DM Maher, RV Knoell
    posted to ion-implanted by rice on 2008-04-24 06:27:15 as **
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