A 1.3 V low-power 430 MHz front-end using a standard digital CMOS process [ISM wireless link]

@inproceedings{citeulike:834240, abstract = {A low-power and low-voltage (LP/LV) RF front-end operating at 430 MHz and implemented in a standard 0.5 \μm digital CMOS process is described. Specific LP/LV bias techniques and design tradeoffs are discussed and their application to the design of a fully integrated direct-conversion receiver is presented. The RF building blocks including a 200 \μA LNA, two different 50 \μA mixers and a ring-oscillator with differential I-Q outputs consuming 300 \μA at 430 MHz, have been manufactured and their performances measured. Taking into account the severe power budget, a total double sideband (DSB) noise figure of 17 dB was achieved, together with a spurious free dynamic range of 55 dB at 60 kHz bandwidth, which is sufficient for the targeted application}, author = {Melly, T. and Porret, A. S. and Enz, C. C. and Kayal, M. }, citeulike-article-id = {834240}, journal = {Custom Integrated Circuits Conference, 1998., Proceedings of the IEEE 1998}, keywords = {low-power, oscillator}, pages = {503--506}, posted-at = {2006-09-08 00:23:33}, priority = {2}, title = {A 1.3 V low-power 430 MHz front-end using a standard digital CMOS process [ISM wireless link]}, url = {http://ieeexplore.ieee.org/xpls/abs\_all.jsp?arnumber=695028}, year = {1998} }

TY - CONF ID - citeulike:834240 L3 - citeulike-article-id:834240 TI - A 1.3 V low-power 430 MHz front-end using a standard digital CMOS process [ISM wireless link] JF - Custom Integrated Circuits Conference, 1998., Proceedings of the IEEE 1998 SP - 503 EP - 506 N2 - A low-power and low-voltage (LP/LV) RF front-end operating at 430 MHz and implemented in a standard 0.5 μm digital CMOS process is described. Specific LP/LV bias techniques and design tradeoffs are discussed and their application to the design of a fully integrated direct-conversion receiver is presented. The RF building blocks including a 200 μA LNA, two different 50 μA mixers and a ring-oscillator with differential I-Q outputs consuming 300 μA at 430 MHz, have been manufactured and their performances measured. Taking into account the severe power budget, a total double sideband (DSB) noise figure of 17 dB was achieved, together with a spurious free dynamic range of 55 dB at 60 kHz bandwidth, which is sufficient for the targeted application KW - low-power KW - oscillator AU - Melly, T AU - Porret, AS AU - Enz, CC AU - Kayal, M PY - 1998/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=695028 ER -