A linear NMOS depletion resistor and its application in an integrated amplifier

by: JN Babanezhad, GC Temes

Solid-State Circuits, IEEE Journal of, Vol. 19, No. 6. (1984), pp. 932-938.

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Abstract

A linear resistor has been realized by using NMOS depletion transistors operated in the triode region. While such a resistor is mainly intended for single-ended and first quadrant mode of conduction, where it achieves a nonlinearity of .03% full scale in the 0-10 V voltage range, it can also be used as a floating element and operated in the first as well as third quadrant mode of conduction (i.e. with V and I both either positive or negative) with some degradation in linearity and voltage range. A linear noninverting amplifier with an accurately controlled gain of 16 has been realized by using a high open-loop gain (90 dB) operational amplifier and dimensioning the simulated resistors to set the closed-loop gain.

@article{citeulike:906030, abstract = {A linear resistor has been realized by using NMOS depletion transistors operated in the triode region. While such a resistor is mainly intended for single-ended and first quadrant mode of conduction, where it achieves a nonlinearity of .03\% full scale in the 0-10 V voltage range, it can also be used as a floating element and operated in the first as well as third quadrant mode of conduction (i.e. with V and I both either positive or negative) with some degradation in linearity and voltage range. A linear noninverting amplifier with an accurately controlled gain of 16 has been realized by using a high open-loop gain (90 dB) operational amplifier and dimensioning the simulated resistors to set the closed-loop gain.}, author = {Babanezhad, J. N. and Temes, G. C. }, citeulike-article-id = {906030}, journal = {Solid-State Circuits, IEEE Journal of}, keywords = {amplifier, depletion, mode}, number = {6}, pages = {932--938}, posted-at = {2006-10-19 16:55:53}, priority = {3}, title = {A linear NMOS depletion resistor and its application in an integrated amplifier}, url = {http://ieeexplore.ieee.org/xpls/abs\_all.jsp?arnumber=1052248}, volume = {19}, year = {1984} }

RIS record

TY - JOUR ID - citeulike:906030 L3 - citeulike-article-id:906030 TI - A linear NMOS depletion resistor and its application in an integrated amplifier JF - Solid-State Circuits, IEEE Journal of VL - 19 IS - 6 SP - 932 EP - 938 N2 - A linear resistor has been realized by using NMOS depletion transistors operated in the triode region. While such a resistor is mainly intended for single-ended and first quadrant mode of conduction, where it achieves a nonlinearity of .03% full scale in the 0-10 V voltage range, it can also be used as a floating element and operated in the first as well as third quadrant mode of conduction (i.e. with V and I both either positive or negative) with some degradation in linearity and voltage range. A linear noninverting amplifier with an accurately controlled gain of 16 has been realized by using a high open-loop gain (90 dB) operational amplifier and dimensioning the simulated resistors to set the closed-loop gain. KW - amplifier KW - depletion KW - mode AU - Babanezhad, JN AU - Temes, GC PY - 1984/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1052248 ER -

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