Gate length dependent polysilicon depletion effects

by: Chang-Hoon Choi, PR Chidambaram, R Khamankar, CF Machala, Zhiping Yu, RW Dutton

Electron Device Letters, IEEE, Vol. 23, No. 4. (2002), pp. 224-226.

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Abstract

Degradation of MOS gate capacitance in the inversion region becomes worse as the gate length is scaled down, according to a new experiment. Namely, the polysilicon depletion effect has gate length dependence. The origin of this gate length-dependent polydepletion effect has been modeled and verified by using device simulation. As a result, the gradient of dopant distribution resulting from ion implantation is shown to be an additional potential drop in the polygate. In addition, the enlarged depletion width at the gate sidewall can worsen the polydepletion effect for very-small MOSFETs

@article{118, abstract = {Degradation of MOS gate capacitance in the inversion region becomes worse as the gate length is scaled down, according to a new experiment. Namely, the polysilicon depletion effect has gate length dependence. The origin of this gate length-dependent polydepletion effect has been modeled and verified by using device simulation. As a result, the gradient of dopant distribution resulting from ion implantation is shown to be an additional potential drop in the polygate. In addition, the enlarged depletion width at the gate sidewall can worsen the polydepletion effect for very-small MOSFETs}, author = {Choi, Chang-Hoon and Chidambaram, P. R. and Khamankar, R. and Machala, C. F. and Yu, Zhiping and Dutton, R. W. }, booktitle = {Electron Device Letters, IEEE}, citeulike-article-id = {2801881}, doi = {10.1109/55.992846}, journal = {Electron Device Letters, IEEE}, keywords = {introduction, microelectronics, polydepletion}, number = {4}, pages = {224--226}, posted-at = {2008-05-15 15:35:15}, priority = {2}, title = {Gate length dependent polysilicon depletion effects}, url = {http://dx.doi.org/10.1109/55.992846}, volume = {23}, year = {2002} }

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TY - JOUR ID - 118 L3 - citeulike-article-id:2801881 TI - Gate length dependent polysilicon depletion effects T2 - Electron Device Letters, IEEE JF - Electron Device Letters, IEEE VL - 23 IS - 4 SP - 224 EP - 226 N2 - Degradation of MOS gate capacitance in the inversion region becomes worse as the gate length is scaled down, according to a new experiment. Namely, the polysilicon depletion effect has gate length dependence. The origin of this gate length-dependent polydepletion effect has been modeled and verified by using device simulation. As a result, the gradient of dopant distribution resulting from ion implantation is shown to be an additional potential drop in the polygate. In addition, the enlarged depletion width at the gate sidewall can worsen the polydepletion effect for very-small MOSFETs KW - introduction KW - microelectronics KW - polydepletion AU - Choi, Chang-Hoon AU - Chidambaram, PR AU - Khamankar, R AU - Machala, CF AU - Yu, Zhiping AU - Dutton, RW PY - 2002/// UR - http://dx.doi.org/10.1109/55.992846 ER -

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