Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices

@article{122, abstract = {We present an efficient and accurate method to characterize the physical thickness of ultrathin gate oxides (down to 25 \Å) and the effective polysilicon doping of advanced CMOS devices. The method is based on the model for Fowler-Nordheim (F-N) tunneling current across the gate oxide with correction in gate voltage to account for the polysilicon-gate depletion. By fitting the model to measured data, both the gate oxide thickness and the effective poly doping are unambiguously determined. Unlike the traditional capacitance-voltage (C-V) technique that overestimates thin-oxide thickness and requires large area capacitor, this approach results in true physical thickness and the measurement can be performed on a standard sub-half micron transistor. The method is suitable for oxide thickness monitoring in manufacturing environments}, author = {Gupta, A. and Fang, Peng and Song, M. and Lin, Ming-Ren and Wollesen, D. and Chen, K. and Hu, C. }, booktitle = {Electron Device Letters, IEEE}, citeulike-article-id = {2805144}, doi = {10.1109/55.644077}, journal = {Electron Device Letters, IEEE}, keywords = {introduction, microelectronics, polydepletion}, number = {12}, pages = {580--582}, posted-at = {2008-05-16 12:55:02}, priority = {2}, title = {Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices}, url = {http://dx.doi.org/10.1109/55.644077}, volume = {18}, year = {1997} }

TY - JOUR ID - 122 L3 - citeulike-article-id:2805144 TI - Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices T2 - Electron Device Letters, IEEE JF - Electron Device Letters, IEEE VL - 18 IS - 12 SP - 580 EP - 582 N2 - We present an efficient and accurate method to characterize the physical thickness of ultrathin gate oxides (down to 25 Å) and the effective polysilicon doping of advanced CMOS devices. The method is based on the model for Fowler-Nordheim (F-N) tunneling current across the gate oxide with correction in gate voltage to account for the polysilicon-gate depletion. By fitting the model to measured data, both the gate oxide thickness and the effective poly doping are unambiguously determined. Unlike the traditional capacitance-voltage (C-V) technique that overestimates thin-oxide thickness and requires large area capacitor, this approach results in true physical thickness and the measurement can be performed on a standard sub-half micron transistor. The method is suitable for oxide thickness monitoring in manufacturing environments KW - introduction KW - microelectronics KW - polydepletion AU - Gupta, A AU - Fang, Peng AU - Song, M AU - Lin, Ming-Ren AU - Wollesen, D AU - Chen, K AU - Hu, C PY - 1997/// UR - http://dx.doi.org/10.1109/55.644077 ER -