Deep-submicrometer MOS device fabrication using a photoresist-ashing technique

@article{153, abstract = {A photoresist-ashing process has been developed which, when used in conjunction with conventional g-line optical lithography, permits the controlled definition of deep-submicrometer features. The ultrafine lines were obtained by calibrated ashing of the lithographically defined features in oxygen plasma. The technique has been successfully used to fabricate MOSFETs with effective channel length as small as 0.15 \μm that show excellent characteristics. An NMOS ring oscillator with 0.2-\μm devices has been fabricated with a room-temperature propagation delay of 22 ps/stage. Studies indicate that the thinning is both reproducible and uniform so that it should be usable in circuit as well as device fabrication. Since most polymer-based resist materials are etchable with an oxygen plasma, the basic technique could be extended to supplement other lithographic processes, including e-beam and X-ray processes, for fabricating both silicon and nonsilicon devices and circuits}, author = {Chung, J. and Jeng, M. and Moon, J. E. and Wu, A. T. and Chan, T. Y. and Ko, P. K. and Hu, C. }, booktitle = {Electron Device Letters, IEEE}, citeulike-article-id = {2988111}, doi = {10.1109/55.684}, journal = {Electron Device Letters, IEEE}, keywords = {introduction, resist-trimming}, number = {4}, pages = {186--188}, posted-at = {2008-07-11 13:24:20}, priority = {2}, title = {Deep-submicrometer MOS device fabrication using a photoresist-ashing technique}, url = {http://dx.doi.org/10.1109/55.684}, volume = {9}, year = {1988} }

TY - JOUR ID - 153 L3 - citeulike-article-id:2988111 TI - Deep-submicrometer MOS device fabrication using a photoresist-ashing technique T2 - Electron Device Letters, IEEE JF - Electron Device Letters, IEEE VL - 9 IS - 4 SP - 186 EP - 188 N2 - A photoresist-ashing process has been developed which, when used in conjunction with conventional g-line optical lithography, permits the controlled definition of deep-submicrometer features. The ultrafine lines were obtained by calibrated ashing of the lithographically defined features in oxygen plasma. The technique has been successfully used to fabricate MOSFETs with effective channel length as small as 0.15 μm that show excellent characteristics. An NMOS ring oscillator with 0.2-μm devices has been fabricated with a room-temperature propagation delay of 22 ps/stage. Studies indicate that the thinning is both reproducible and uniform so that it should be usable in circuit as well as device fabrication. Since most polymer-based resist materials are etchable with an oxygen plasma, the basic technique could be extended to supplement other lithographic processes, including e-beam and X-ray processes, for fabricating both silicon and nonsilicon devices and circuits KW - introduction KW - resist-trimming AU - Chung, J AU - Jeng, M AU - Moon, JE AU - Wu, AT AU - Chan, TY AU - Ko, PK AU - Hu, C PY - 1988/// UR - http://dx.doi.org/10.1109/55.684 ER -