these_morel's tags

3d-integration absorption actinometry aluminium angle ar arxps bcl3 bcl3-o2 c4f8 c4f8-ar-h2 capacitive cbrf3 ccl4-o2 cf3-cl cf4 cf4-cl2 cf4-o2 chemical-vapor-deposition chf3 chf3-cl2-bcl3 cl2 cl2-nf3-o2 cl2-o2 cleaning clo cmos co co2 damage decomposition deformation-resist deposition dhf dielectric dispositifs-experimentaux dissociation dry-etching dual-metal-gate ecr effet-de-charge eot etchback etching floating_sample fluorine fluorocarbon gate gate-patterning hbr hbr-cl2-o2 hbr-o2 helicon-plasma hf hfalo hfn hfo2 hfon hfsio hfsion high-k icp incorporation interconnections interferometry introduction line-edge-roughness lpcvd magnetoplasma masking-materials mass-spectrometry materials meb metal metal-gate microelectronics midgap mo molecular-beam-system molybdenum moores-law mosi n2 negative-ion neural-networks new-devices nf3 nf3-h2 nf3-he nf3-o2 nh3 nitrogen notching o2 optical-emission-spectroscopy oxidation parois passivation plasma plasmas polydepletion polymer_layer poly-si reactor recess resistivity resist-trimming rie ruthenium selectivity sf6 sf6-ar sf6-ar-cl2 sf6-chf3 sf6-n2 sf6-o2 sicl4-cl2 silicidation silicon sio2 sputter-deposition tac tan taper tcp tcp_9400 tem temperature time-delay-effect tin titane_nitride titanium tungsten tungsten-nitride tungsten-oxide tunneling uhf-ecr vlsi volatility wcl wco6 wet-etching wocl work-function wsi wsix xps xrr zralo zro2

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